WSD100N06GDN56 N-ikanni 60V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET ọja Akopọ
Foliteji ti WSD100N06GDN56 MOSFET jẹ 60V, lọwọlọwọ jẹ 100A, resistance jẹ 3mΩ, ikanni jẹ N-ikanni, ati package jẹ DFN5X6-8.
WINSOK MOSFET awọn agbegbe ohun elo
Awọn ipese agbara iṣoogun MOSFET, PDs MOSFET, drones MOSFET, awọn siga itanna MOSFET, awọn ohun elo pataki MOSFET, ati awọn irinṣẹ agbara MOSFET.
WINSOK MOSFET ni ibamu si awọn nọmba ohun elo iyasọtọ miiran
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL13N6F7,STL14N6F7.PANJIT MOSFET PSMQC33N6NS1.POTENS Semikondokito MOSFET PDC692X.
MOSFET paramita
| Aami | Paramita | Rating | Awọn ẹya | ||
| VDS | Sisan-Orisun Foliteji | 60 | V | ||
| VGS | Gate-Orisun Foliteji | ±20 | V | ||
| ID1,6 | Tesiwaju Sisan Lọwọlọwọ | TC=25°C | 100 | A | |
| TC=100°C | 65 | ||||
| IDM2 | Pulsed Sisan Lọwọlọwọ | TC=25°C | 240 | A | |
| PD | Ipilẹ agbara ti o pọju | TC=25°C | 83 | W | |
| TC=100°C | 50 | ||||
| IAS | Avalanche Lọwọlọwọ, Pulu ẹyọkan | 45 | A | ||
| EAS3 | Nikan Polusi owusuwusu Energy | 101 | mJ | ||
| TJ | O pọju Junction otutu | 150 | ℃ | ||
| TSTG | Ibi ipamọ otutu Ibiti | -55 si 150 | ℃ | ||
| RθJA1 | Gbona Resistance Junction to ibaramu | Ipo imurasilẹ | 55 | ℃/W | |
| RθJC1 | Gbona Resistance-Junction to Case | Ipo imurasilẹ | 1.5 | ℃/W | |
| Aami | Paramita | Awọn ipo | Min. | Iru. | O pọju. | Ẹyọ | |
| Aimi | |||||||
| V(BR) DSS | Sisan-Orisun didenukole Foliteji | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Zero Gate Foliteji Sisan Lọwọlọwọ | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ=85°C | 30 | ||||||
| IGSS | Gate jijo Lọwọlọwọ | VGS = ± 20V, VDS = 0V | ± 100 | nA | |||
| Lori Awọn abuda | |||||||
| VGS(TH) | Foliteji Ala ẹnu-ọna | VGS = VDS, ID = 250µA | 1.2 | 1.8 | 2.5 | V | |
| RDS(lori)2 | Sisan-Orisun On-ipinle Resistance | VGS = 10V, ID = 20A | 3.0 | 3.6 | mΩ | ||
| VGS = 4.5V, ID = 15A | 4.4 | 5.4 | mΩ | ||||
| Yipada | |||||||
| Qg | Total Gate agbara | VDS=30V VGS=10V ID=20A | 58 | nC | |||
| Qgs | Ẹnubodè-ekan idiyele | 16 | nC | ||||
| Qgd | Ẹnubodè-Sisan agbara | 4.0 | nC | ||||
| td (lori) | Tan-an Idaduro Time | VGEN=10V VDD=30V ID=20A RG=Ω | 18 | ns | |||
| tr | Tan-an Rise Time | 8 | ns | ||||
| td (pa) | Pa Aago Idaduro | 50 | ns | ||||
| tf | Pa Fall Time | 11 | ns | ||||
| Rg | Gat resistance | VGS = 0V, VDS = 0V, f = 1MHz | 0.7 | Ω | |||
| Ìmúdàgba | |||||||
| Ciss | Ni Capacitance | VGS=0V VDS = 30V f = 1MHz | 3458 | pF | |||
| Kosi | Jade Agbara | Ọdun 1522 | pF | ||||
| Krss | Yiyipada Gbigbe Capacitance | 22 | pF | ||||
| Sisan-Orisun Diode Awọn abuda ati Iwọn-wonsi to pọju | |||||||
| IS1,5 | Tesiwaju Orisun Lọwọlọwọ | VG=VD=0V, Fi agbara mu lọwọlọwọ | 55 | A | |||
| ISM | Pulsed Orisun Current3 | 240 | A | ||||
| VSD2 | Diode Forward Foliteji | ISD = 1A, VGS=0V | 0.8 | 1.3 | V | ||
| trr | Yipada Gbigba Time | ISD=20A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Yipada Gbigba agbara | 33 | nC | ||||
