WSD100N15DN56G N-ikanni 150V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET ọja Akopọ
Foliteji ti WSD100N15DN56G MOSFET jẹ 150V, lọwọlọwọ jẹ 100A, resistance jẹ 6mΩ, ikanni jẹ N-ikanni, ati package jẹ DFN5X6-8.
WINSOK MOSFET awọn agbegbe ohun elo
Awọn ipese agbara iṣoogun MOSFET, PDs MOSFET, drones MOSFET, awọn siga itanna MOSFET, awọn ohun elo pataki MOSFET, ati awọn irinṣẹ agbara MOSFET.
MOSFET paramita
| Aami | Paramita | Rating | Awọn ẹya |
| VDS | Sisan-Orisun Foliteji | 150 | V |
| VGS | Gate-Orisun Foliteji | ±20 | V |
| ID | Imugbẹ lọwọlọwọ lọwọlọwọ, VGS@ 10V(TC=25℃) | 100 | A |
| IDM | Pulsed Sisan Lọwọlọwọ | 360 | A |
| EAS | Nikan Polusi owusuwusu Energy | 400 | mJ |
| PD | Àpapọ̀ Ìparun Àpapọ̀...C=25℃) | 160 | W |
| RÉJA | Gbona resistance, ipade-ibaramu | 62 | ℃/W |
| RθJC | Gbona resistance, junction-ọran | 0.78 | ℃/W |
| TSTG | Ibi ipamọ otutu Ibiti | -55 si 175 | ℃ |
| TJ | Ibiti o gbona Junction Nṣiṣẹ | -55 si 175 | ℃ |
| Aami | Paramita | Awọn ipo | Min. | Iru. | O pọju. | Ẹyọ |
| BVDSS | Sisan-Orisun didenukole Foliteji | VGS= 0V, ID= 250uA | 150 | --- | --- | V |
| RDS(ON) | Aimi Sisan-Orisun On-Resistance2 | VGS= 10V, ID= 20A | --- | 9 | 12 | mΩ |
| VGS(th) | Foliteji Ala ẹnu-ọna | VGS=VDS, ID= 250uA | 2.0 | 3.0 | 4.0 | V |
| IDSS | Sisan-Orisun jijo Lọwọlọwọ | VDS= 100V, VGS= 0V, TJ=25℃ | --- | --- | 1 | uA |
| IGSS | Ẹnu-Orisun jijo Lọwọlọwọ | VGS= 20V, VDS= 0V | --- | --- | ± 100 | nA |
| Qg | Total Gate agbara | VDS= 50V, VGS= 10V, ID= 20A | --- | 66 | --- | nC |
| Qgs | Ẹnu-Orisun idiyele | --- | 26 | --- | ||
| Qgd | Ẹnubodè-Sisan agbara | --- | 18 | --- | ||
| Td(lori) | Tan-On Idaduro Time | VDD= 50V,VGS= 10V RG=2Ω, ID= 20A | --- | 37 | --- | ns |
| Tr | Aago dide | --- | 98 | --- | ||
| Td (pa) | Pa Aago Idaduro | --- | 55 | --- | ||
| Tf | Igba Irẹdanu Ewe | --- | 20 | --- | ||
| Ciss | Agbara titẹ sii | VDS= 30V, VGS=0V, f=1MHz | --- | 5450 | --- | pF |
| Kosi | O wu Agbara | --- | Ọdun 1730 | --- | ||
| Crss | Yiyipada Gbigbe Capacitance | --- | 195 | --- |
