WSD2090DN56 N-ikanni 20V 80A DFN5*6-8 WINSOK MOSFET

kukuru apejuwe:

Nọmba awoṣe:WSD2090DN56

BVDSS:20V

RDSON:2.8mΩ

ID:80A

Ikanni:N-ikanni

Apo:DFN5 * 6-8

Ọja Ooru:Foliteji ti WSD2090DN56 MOSFET jẹ 20V, lọwọlọwọ jẹ 80A, resistance jẹ 2.8mΩ, ikanni naa jẹ ikanni N-ikanni, ati package jẹ DFN5 * 6-8.

Awọn ohun elo:Awọn siga itanna, awọn drones, awọn irinṣẹ itanna, awọn ibon fascia, PD, awọn ohun elo ile kekere, ati bẹbẹ lọ.

Fi imeeli ranṣẹ si wa PDF

Alaye ọja

Ohun elo

ọja Tags

Gbogbogbo Apejuwe

WSD2090DN56 jẹ trench N-Ch MOSFET iṣẹ ṣiṣe ti o ga julọ pẹlu iwuwo sẹẹli ti o ga pupọ, eyiti o pese RDSON ti o dara julọ ati idiyele ẹnu-ọna fun pupọ julọ awọn ohun elo oluyipada ẹtu amuṣiṣẹpọ. WSD2090DN56 pade RoHS ati ibeere Ọja Alawọ ewe 100% EAS iṣeduro pẹlu igbẹkẹle iṣẹ kikun ti a fọwọsi.

Awọn ẹya ara ẹrọ

Imọ-ẹrọ Trench iwuwo sẹẹli giga giga, Super Low Gate Charge, Idinku ipa ipa CdV / dt ti o dara julọ, 100% EAS Ẹri, Ẹrọ alawọ ewe Wa

Awọn ohun elo

Yipada, Eto Agbara, Yipada fifuye, awọn siga itanna, awọn drones, awọn irinṣẹ itanna, awọn ibon fascia, PD, awọn ohun elo ile kekere, ati bẹbẹ lọ.

nọmba ohun elo ti o baamu

AOS AON6572

Awọn paramita pataki

Awọn idiyele to gaju (TC=25℃ ayafi ti o ba ṣe akiyesi bibẹẹkọ)

Aami	Paramita	O pọju.	Awọn ẹya
VDSS	Sisan-Orisun Foliteji	20	V
VGSS	Gate-Orisun Foliteji	± 12	V
ID@TC=25℃	Imugbẹ lọwọlọwọ lọwọlọwọ, VGS @ 10V1	80	A
ID@TC=100℃	Imugbẹ lọwọlọwọ lọwọlọwọ, VGS @ 10V1	59	A
IDM	Pulsed Drain Akọsilẹ lọwọlọwọ1	360	A
EAS	Nikan Pulsed owusuwusu Energy note2	110	mJ
PD	Imukuro agbara	81	W
RÉJA	Gbona Resistance, Junction to Case	65	℃/W
RθJC	Iparapọ Atako Gbona-Ọran 1	4	℃/W
TJ, TSTG	Awọn ọna ati Ibi ipamọ otutu Ibiti	-55 to +175	℃

Awọn abuda Itanna (TJ=25 ℃, ayafi ti a ba ṣe akiyesi bibẹẹkọ)

Aami	Paramita	Awọn ipo	Min	Iru	O pọju	Awọn ẹya
BVDSS	Sisan-Orisun didenukole Foliteji	VGS=0V, ID=250μA	20	24	---	V
△BVDSS/△TJ	BVDSS otutu olùsọdipúpọ	Itọkasi si 25℃, ID=1mA	---	0.018	---	V/℃
VGS(th)	Foliteji Ala ẹnu-ọna	VDS = VGS, ID = 250μA	0.50	0.65	1.0	V
RDS(ON)	Aimi Sisan-Orisun On-Resistance	VGS=4.5V, ID=30A	---	2.8	4.0	mΩ
RDS(ON)	Aimi Sisan-Orisun On-Resistance	VGS=2.5V, ID=20A	---	4.0	6.0	mΩ
IDSS	Zero Gate Foliteji Sisan Lọwọlọwọ	VDS=20V,VGS=0V	---	---	1	μA
IGSS	Gate-Ara jijo Lọwọlọwọ	VGS=±10V, VDS=0V	---	---	± 100	nA
Ciss	Agbara titẹ sii	VDS=10V,VGS=0V,f=1MHZ	---	3200	---	pF
Kosi	O wu Agbara		---	460	---
Krss	Yiyipada Gbigbe Capacitance		---	446	---
Qg	Total Gate agbara	VGS=4.5V,VDS=10V,ID=30A	---	11.05	---	nC
Qgs	Ẹnu-Orisun idiyele		---	1.73	---
Qgd	Ẹnubodè-Sisan agbara		---	3.1	---
tD(tan)	Tan-an Idaduro Time	VGS=4.5V, VDS=10V, ID=30ARGEN=1.8Ω	---	9.7	---	ns
tr	Tan-an Rise Time		---	37	---
tD (pa)	Pa Aago Idaduro		---	63	---
tf	Pa isubu Akoko		---	52	---
VSD	Diode Forward Foliteji	IS=7.6A,VGS=0V	---	---	1.2	V