WSD20L120DN56 P-ikanni -20V -120A DFN5*6-8 WINSOK MOSFET
Gbogbogbo Apejuwe
WSD20L120DN56 jẹ P-Ch MOSFET ti o n ṣiṣẹ oke pẹlu eto sẹẹli iwuwo giga, fifun RDSON to dara julọ ati idiyele ẹnu-ọna fun awọn lilo oluyipada ẹtu amuṣiṣẹpọ pupọ julọ. WSD20L120DN56 pade awọn ibeere 100% EAS fun RoHS ati awọn ọja ore ayika, pẹlu ifọwọsi igbẹkẹle iṣẹ ni kikun.
Awọn ẹya ara ẹrọ
1, Imọ-ẹrọ iwuwo sẹẹli giga giga
2, Super Low Gate agbara
3, O tayọ CdV / dt ipa idinku
4, 100% EAS Ẹri 5, Alawọ ewe ẹrọ Wa
Awọn ohun elo
Iyipada Igbohunsafẹfẹ Igbohunsafẹfẹ Amuṣiṣẹpọ Buck fun MB/NB/UMPC/VGA, Nẹtiwọki DC-DC Eto Agbara, Yipada fifuye, E-siga, Ṣaja Alailowaya, Motors, Drones, Medical, Car Ṣaja, Adarí, Digital Products, Awọn Ohun elo Ile Kekere, Awọn Itanna Onibara.
nọmba ohun elo ti o baamu
AOS AON6411,NIKO PK5A7BA
Awọn paramita pataki
Aami | Paramita | Rating | Awọn ẹya | |
10s | Ipo imurasilẹ | |||
VDS | Sisan-Orisun Foliteji | -20 | V | |
VGS | Gate-Orisun Foliteji | ±10 | V | |
ID@TC=25℃ | Tesiwaju Sisan Lọwọlọwọ, VGS @ -10V1 | -120 | A | |
ID@TC=100℃ | Tesiwaju Sisan Lọwọlọwọ, VGS @ -10V1 | -69.5 | A | |
ID@TA=25℃ | Tesiwaju Sisan Lọwọlọwọ, VGS @ -10V1 | -25 | -22 | A |
ID@TA=70℃ | Tesiwaju Sisan Lọwọlọwọ, VGS @ -10V1 | -24 | -18 | A |
IDM | Pulsed Sisan Current2 | -340 | A | |
EAS | Nikan Polusi owusuwusu Energy3 | 300 | mJ | |
IAS | Avalanche Lọwọlọwọ | -36 | A | |
PD@TC=25℃ | Lapapọ Agbara ipadanu4 | 130 | W | |
PD@TA=25℃ | Lapapọ Agbara ipadanu4 | 6.8 | 6.25 | W |
TSTG | Ibi ipamọ otutu Ibiti | -55 si 150 | ℃ | |
TJ | Ibiti o gbona Junction Nṣiṣẹ | -55 si 150 | ℃ |
Aami | Paramita | Awọn ipo | Min. | Iru. | O pọju. | Ẹyọ |
BVDSS | Sisan-Orisun didenukole Foliteji | VGS=0V, ID=-250uA | -20 | --- | --- | V |
△BVDSS/△TJ | BVDSS otutu olùsọdipúpọ | Itọkasi si 25℃, ID=-1mA | --- | -0.0212 | --- | V/℃ |
RDS(ON) | Aimi Sisan-Orisun On-Resistance2 | VGS = -4.5V , ID = -20A | --- | 2.1 | 2.7 | mΩ |
VGS = -2.5V , ID = -20A | --- | 2.8 | 3.7 | |||
VGS(th) | Foliteji Ala ẹnu-ọna | VGS=VDS, ID =-250uA | -0.4 | -0.6 | -1.0 | V |
△VGS(th) | VGS(th) Olusodipupo iwọn otutu | --- | 4.8 | --- | mV/℃ | |
IDSS | Sisan-Orisun jijo Lọwọlọwọ | VDS=-20V, VGS=0V, TJ=25℃ | --- | --- | -1 | uA |
VDS=-20V, VGS=0V, TJ=55℃ | --- | --- | -6 | |||
IGSS | Ẹnu-Orisun jijo Lọwọlọwọ | VGS=±20V, VDS=0V | --- | --- | ± 100 | nA |
gfs | Siwaju Transconductance | VDS=-5V, ID=-20A | --- | 100 | --- | S |
Rg | Resistance ẹnu-bode | VDS=0V, VGS=0V, f=1MHz | --- | 2 | 5 | Ω |
Qg | Lapapọ Owo Ẹnubode (-4.5V) | VDS=-10V, VGS=-4.5V, ID=-20A | --- | 100 | --- | nC |
Qgs | Ẹnu-Orisun idiyele | --- | 21 | --- | ||
Qgd | Ẹnubodè-Sisan agbara | --- | 32 | --- | ||
Td(lori) | Tan-On Idaduro Time | VDD=-10V , VGEN= -4.5V , RG=3Ω ID=-1A ,RL=0.5Ω | --- | 20 | --- | ns |
Tr | Aago dide | --- | 50 | --- | ||
Td (pa) | Pa Aago Idaduro | --- | 100 | --- | ||
Tf | Igba Irẹdanu Ewe | --- | 40 | --- | ||
Ciss | Agbara titẹ sii | VDS=-10V, VGS=0V, f=1MHz | --- | 4950 | --- | pF |
Kosi | O wu Agbara | --- | 380 | --- | ||
Krss | Yiyipada Gbigbe Capacitance | --- | 290 | --- |
Kọ ifiranṣẹ rẹ nibi ki o si fi si wa