WSD25280DN56G N-ikanni 25V 280A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET ọja Akopọ
Foliteji ti WSD25280DN56G MOSFET jẹ 25V, lọwọlọwọ jẹ 280A, resistance jẹ 0.7mΩ, ikanni jẹ ikanni N-ikanni, ati package jẹ DFN5X6-8.
WINSOK MOSFET awọn agbegbe ohun elo
Ga Igbohunsafẹfẹ Point-ti-Fifuye Amuṣiṣẹpọ,Ẹtu Converter,Nẹtiwọki DC-DC Power System,Ohun elo Irinṣẹ Agbara, E-siga MOSFET, gbigba agbara alailowaya MOSFET, drones MOSFET, itọju iṣoogun MOSFET, awọn ṣaja ọkọ ayọkẹlẹ MOSFET, awọn olutona MOSFET, awọn ọja oni nọmba MOSFET, awọn ohun elo ile kekere MOSFET, ẹrọ itanna olumulo MOSFET.
WINSOK MOSFET ni ibamu si awọn nọmba ohun elo iyasọtọ miiran
Nxperian MOSFET PSMN1R-4ULD.
POTENS Semikondokito MOSFET PDC262X.
MOSFET paramita
| Aami | Paramita | Rating | Awọn ẹya |
| VDS | Sisan-Orisun Foliteji | 25 | V |
| VGS | Ẹnubodè-Source Foliteji | ±20 | V |
| ID@TC= 25℃ | Tesiwaju Sisan Lọwọlọwọ(Ohun alumọni Limited)1,7 | 280 | A |
| ID@TC= 70℃ | Imugbẹ lọwọlọwọ lọwọlọwọ (Silicon Limited)1,7 | 190 | A |
| IDM | Pulsed Sisan Lọwọlọwọ2 | 600 | A |
| EAS | Nikan Polusi owusuwusu Energy3 | 1200 | mJ |
| IAS | Avalanche Lọwọlọwọ | 100 | A |
| PD@TC= 25℃ | Lapapọ Agbara ipadanu4 | 83 | W |
| TSTG | Ibi ipamọ otutu Ibiti | -55 si 150 | ℃ |
| TJ | Ibiti o gbona Junction Nṣiṣẹ | -55 si 150 | ℃ |
| Aami | Paramita | Awọn ipo | Min. | Iru. | O pọju. | Ẹyọ |
| BVDSS | Sisan-Orisun didenukole Foliteji | VGS= 0V, ID= 250uA | 25 | --- | --- | V |
| △BVDSS/△TJ | BVDSSOlusodipupo iwọn otutu | Itọkasi si 25℃, ID= 1mA | --- | 0.022 | --- | V/℃ |
| RDS(ON) | Aimi Sisan-Orisun On-Resistance2 | VGS= 10V, ID= 20A | --- | 0.7 | 0.9 | mΩ |
| VGS= 4.5V, ID= 20A | --- | 1.4 | 1.9 | |||
| VGS(th) | Foliteji Ala ẹnu-ọna | VGS=VDS, ID= 250uA | 1.0 | --- | 2.5 | V |
| △VGS(th) | VGS(th)Olusodipupo iwọn otutu | --- | -6.1 | --- | mV/℃ | |
| IDSS | Sisan-Orisun jijo Lọwọlọwọ | VDS= 20V, VGS= 0V, TJ= 25℃ | --- | --- | 1 | uA |
| VDS= 20V, VGS= 0V, TJ= 55℃ | --- | --- | 5 | |||
| IGSS | Ẹnu-Orisun jijo Lọwọlọwọ | VGS=±20V, VDS= 0V | --- | --- | ±100 | nA |
| gfs | Siwaju Transconductance | VDS= 5V, ID= 10A | --- | 40 | --- | S |
| Rg | Resistance ẹnu-bode | VDS= 0V, VGS= 0V, f=1MHz | --- | 3.8 | 1.5 | Ω |
| Qg | Lapapọ idiyele ẹnu-ọna (4.5V) | VDS= 15V, VGS= 4.5V, ID= 20A | --- | 72 | --- | nC |
| Qgs | Ẹnu-Orisun idiyele | --- | 18 | --- | ||
| Qgd | Ẹnubodè-Sisan agbara | --- | 24 | --- | ||
| Td(lori) | Tan-On Idaduro Time | VDD= 15V, VGEN= 10V, RG=1Ω, ID= 10A | --- | 33 | --- | ns |
| Tr | Aago dide | --- | 55 | --- | ||
| Td (pa) | Pa Aago Idaduro | --- | 62 | --- | ||
| Tf | Igba Irẹdanu Ewe | --- | 22 | --- | ||
| Ciss | Agbara titẹ sii | VDS= 15V, VGS= 0V, f=1MHz | --- | 7752 | --- | pF |
| Kosi | O wu Agbara | --- | 1120 | --- | ||
| Crss | Yiyipada Gbigbe Capacitance | --- | 650 | --- |
