WSD30140DN56 N-ikanni 30V 85A DFN5*6-8 WINSOK MOSFET

kukuru apejuwe:

Nọmba awoṣe:WSD30140DN56

BVDSS:30V

RDSON:1.7mΩ

ID:85A

Ikanni:N-ikanni

Apo:DFN5 * 6-8

Ọja Ooru:Foliteji ti WSD30140DN56 MOSFET jẹ 30V, lọwọlọwọ jẹ 85A, resistance jẹ 1.7mΩ, ikanni jẹ N-ikanni, ati package jẹ DFN5 * 6-8.

Awọn ohun elo:Awọn siga itanna, awọn ṣaja alailowaya, awọn drones, itọju ilera, ṣaja ọkọ ayọkẹlẹ, awọn olutona, awọn ọja oni-nọmba, awọn ohun elo kekere, ẹrọ itanna onibara, ati bẹbẹ lọ.

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ọja Tags

Gbogbogbo Apejuwe

WSD30140DN56 jẹ trench N-ikanni MOSFET ti o ga julọ pẹlu iwuwo sẹẹli ti o ga pupọ ti n pese RDSON ti o dara julọ ati idiyele ẹnu-ọna fun ọpọlọpọ awọn ohun elo oluyipada ẹtu amuṣiṣẹpọ.WSD30140DN56 ni ibamu pẹlu RoHS ati awọn ibeere ọja alawọ ewe, iṣeduro 100% EAS, igbẹkẹle iṣẹ ni kikun fọwọsi.

Awọn ẹya ara ẹrọ

Ilọsiwaju iwuwo sẹẹli giga ti imọ-ẹrọ Trench, idiyele ẹnu-ọna ultra-kekere, attenuation ipa CdV/dt ti o dara julọ, iṣeduro 100% EAS, awọn ẹrọ alawọ ewe wa

Awọn ohun elo

Amuṣiṣẹpọ-igbohunsafẹfẹ-igbohunsafẹfẹ, awọn oluyipada owo, awọn ọna ṣiṣe agbara DC-DC nẹtiwọọki, awọn ohun elo irinṣẹ ina, awọn siga itanna, gbigba agbara alailowaya, drones, itọju iṣoogun, gbigba agbara ọkọ ayọkẹlẹ, awọn olutona, awọn ọja oni-nọmba, awọn ohun elo kekere, ẹrọ itanna onibara

nọmba ohun elo ti o baamu

AO AON6312, AON6358, AON6360, AON6734, AON6792, AONS36314.LORI NTMFS4847N.VISHAY SiRA62DP.ST STL86N3LLH6AG.INFINEON BSC050N03MSG.TI CSD17327Q5A, CSD17327Q5A, CSD17307Q5A.NXP PH2520U.TOSHIBA TPH4R803PL TPH3R203NL.ROHM RS1E281BN, RS1E280BN, RS1E280GN, RS1E301GN, RS1E321GN, RS1E350BN, RS1E350GN.PANJIT PJQ5410.AP AP3D5R0MT.NKO PK610SA, PK510BA.POTENS PDC3803R

Awọn paramita pataki

Aami	Paramita	Rating	Awọn ẹya
VDS	Sisan-Orisun Foliteji	30	V
VGS	Gate-Orisun Foliteji	±20	V
ID@TC=25℃	Imugbẹ lọwọlọwọ lọwọlọwọ, VGS @ 10V1,7	85	A
ID@TC=70℃	Imugbẹ lọwọlọwọ lọwọlọwọ, VGS @ 10V1,7	65	A
IDM	Pulsed Sisan Current2	300	A
PD@TC=25℃	Lapapọ Agbara ipadanu4	50	W
TSTG	Ibi ipamọ otutu Ibiti	-55 si 150	℃
TJ	Ibiti o gbona Junction Nṣiṣẹ	-55 si 150	℃

Aami	Paramita	Awọn ipo	Min.	Iru.	O pọju.	Ẹyọ
BVDSS	Sisan-Orisun didenukole Foliteji	VGS=0V, ID=250uA	30	---	---	V
△BVDSS/△TJ	BVDSS otutu olùsọdipúpọ	Itọkasi si 25 ℃, ID=1mA	---	0.02	---	V/℃
RDS(ON)	Aimi Sisan-Orisun On-Resistance2	VGS=10V, ID=20A	---	1.7	2.4	mΩ
RDS(ON)	Aimi Sisan-Orisun On-Resistance2	VGS=4.5V, ID=15A		2.5	3.3	mΩ
VGS(th)	Foliteji Ala ẹnu-ọna	VGS=VDS, ID =250uA	1.2	1.7	2.5	V
	Sisan-Orisun jijo Lọwọlọwọ	VDS=24V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Sisan-Orisun jijo Lọwọlọwọ	VDS=24V, VGS=0V, TJ=55℃	---	---	5	uA
IGSS	Ẹnu-Orisun jijo Lọwọlọwọ	VGS=±20V, VDS=0V	---	---	± 100	nA
gfs	Siwaju Transconductance	VDS=5V, ID=20A	---	90	---	S
Qg	Lapapọ idiyele ẹnu-ọna (4.5V)	VDS=15V, VGS=4.5V, ID=20A	---	26	---	nC
Qgs	Ẹnu-Orisun idiyele		---	9.5	---
Qgd	Ẹnubodè-Sisan agbara		---	11.4	---
Td(lori)	Tan-On Idaduro Time	VDD=15V , VGEN=10V , RG=3Ω, RL=0.75Ω.	---	11	---	ns
Tr	Aago dide		---	6	---
Td (pa)	Pa Aago Idaduro		---	38.5	---
Tf	Igba Irẹdanu Ewe		---	10	---
Ciss	Agbara titẹ sii	VDS=15V, VGS=0V, f=1MHz	---	3000	---	pF
Kosi	O wu Agbara		---	1280	---
Krss	Yiyipada Gbigbe Capacitance		---	160	---