WSD30160DN56 N-ikanni 30V 120A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET ọja Akopọ
Foliteji ti WSD30160DN56 MOSFET jẹ 30V, lọwọlọwọ jẹ 120A, resistance jẹ 1.9mΩ, ikanni jẹ N-ikanni, ati package jẹ DFN5X6-8.
WINSOK MOSFET awọn agbegbe ohun elo
E-siga MOSFET, gbigba agbara alailowaya MOSFET, drones MOSFET, itọju iṣoogun MOSFET, awọn ṣaja ọkọ ayọkẹlẹ MOSFET, awọn oludari MOSFET, awọn ọja oni nọmba MOSFET, awọn ohun elo ile kekere MOSFET, ẹrọ itanna olumulo MOSFET.
WINSOK MOSFET ni ibamu si awọn nọmba ohun elo iyasọtọ miiran
AOS MOSFET AON6382,AON6384,AON644A,AON6548.
Onsemi, FAIRCHILD MOSFET NTMFS4834N, NTMFS4C5N.
TOSHIBA MOSFET TPH2R93PL.
PANJIT MOSFET PJQ5426.
NKO-SEM MOSFET PKE1BB.
POTENS Semikondokito MOSFET PDC392X.
MOSFET paramita
| Aami | Paramita | Rating | Awọn ẹya |
| VDS | Sisan-Orisun Foliteji | 30 | V |
| VGS | Ẹnubodè-Source Foliteji | ±20 | V |
| ID@TC= 25℃ | Imugbẹ lọwọlọwọ lọwọlọwọ, VGS@ 10V1,7 | 120 | A |
| ID@TC= 100℃ | Imugbẹ lọwọlọwọ lọwọlọwọ, VGS@ 10V1,7 | 68 | A |
| IDM | Pulsed Sisan Lọwọlọwọ2 | 300 | A |
| EAS | Nikan Polusi owusuwusu Energy3 | 128 | mJ |
| IAS | Avalanche Lọwọlọwọ | 50 | A |
| PD@TC= 25℃ | Lapapọ Agbara ipadanu4 | 62.5 | W |
| TSTG | Ibi ipamọ otutu Ibiti | -55 si 150 | ℃ |
| TJ | Ibiti o gbona Junction Nṣiṣẹ | -55 si 150 | ℃ |
| Aami | Paramita | Awọn ipo | Min. | Iru. | O pọju. | Ẹyọ |
| BVDSS | Sisan-Orisun didenukole Foliteji | VGS= 0V, ID= 250uA | 30 | --- | --- | V |
| △BVDSS/△TJ | BVDSSOlusodipupo iwọn otutu | Itọkasi si 25℃, ID= 1mA | --- | 0.02 | --- | V/℃ |
| RDS(ON) | Aimi Sisan-Orisun On-Resistance2 | VGS= 10V, ID= 20A | --- | 1.9 | 2.5 | mΩ |
| VGS= 4.5V, ID= 15A | --- | 2.9 | 3.5 | |||
| VGS(th) | Foliteji Ala ẹnu-ọna | VGS=VDS, ID= 250uA | 1.2 | 1.7 | 2.5 | V |
| △VGS(th) | VGS(th)Olusodipupo iwọn otutu | --- | -6.1 | --- | mV/℃ | |
| IDSS | Sisan-Orisun jijo Lọwọlọwọ | VDS= 24V, VGS= 0V, TJ= 25℃ | --- | --- | 1 | uA |
| VDS= 24V, VGS= 0V, TJ= 55℃ | --- | --- | 5 | |||
| IGSS | Ẹnu-Orisun jijo Lọwọlọwọ | VGS=±20V, VDS= 0V | --- | --- | ±100 | nA |
| gfs | Siwaju Transconductance | VDS= 5V, ID= 10A | --- | 32 | --- | S |
| Rg | Resistance ẹnu-bode | VDS= 0V, VGS=0V, f=1MHz | --- | 0.8 | 1.5 | Ω |
| Qg | Lapapọ idiyele ẹnu-ọna (4.5V) | VDS= 15V, VGS= 4.5V, ID= 20A | --- | 38 | --- | nC |
| Qgs | Ẹnu-Orisun idiyele | --- | 10 | --- | ||
| Qgd | Ẹnubodè-Sisan agbara | --- | 13 | --- | ||
| Td(lori) | Tan-On Idaduro Time | VDD= 15V, VGEN= 10V, RG=6Ω, ID=1A, RL=15Ω. | --- | 25 | --- | ns |
| Tr | Aago dide | --- | 23 | --- | ||
| Td (pa) | Pa Aago Idaduro | --- | 95 | --- | ||
| Tf | Igba Irẹdanu Ewe | --- | 40 | --- | ||
| Ciss | Agbara titẹ sii | VDS= 15V, VGS=0V, f=1MHz | --- | 4900 | --- | pF |
| Kosi | O wu Agbara | --- | 1180 | --- | ||
| Crss | Yiyipada Gbigbe Capacitance | --- | 530 | --- |
