WSD3023DN56 N-Ch ati ikanni P-ikanni 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET

kukuru apejuwe:

Nọmba awoṣe:WSD3023DN56

BVDSS:30V/-30V

RDSON:14mΩ/23mΩ

ID:14A/-12A

Ikanni:N-Ch ati P-ikanni

Apo:DFN5 * 6-8

Ọja Ooru:Awọn foliteji ti WSD3023DN56 MOSFET ni 30V/-30V, awọn ti isiyi is14A/-12A, awọn resistance ni 14mΩ/23mΩ, awọn ikanni ti wa ni N-Ch ati P-ikanni, ati awọn package jẹ DFN5 * 6-8.

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Gbogbogbo Apejuwe

WSD3023DN56 jẹ trench iṣẹ ṣiṣe ti o ga julọ N-ch ati P-ch MOSFETs pẹlu iwuwo sẹẹli ti o ga pupọ, eyiti o pese RDSON ti o dara julọ ati idiyele ẹnu-ọna fun pupọ julọ awọn ohun elo oluyipada ẹtu amuṣiṣẹpọ.WSD3023DN56 pade RoHS ati ibeere Ọja Alawọ ewe 100% EAS iṣeduro pẹlu igbẹkẹle iṣẹ kikun ti a fọwọsi.

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Ilọsiwaju iwuwo sẹẹli giga ti imọ-ẹrọ Trench, Super Low Gate Charge, Idinku ipa ipa CdV/dt ti o dara julọ, 100% EAS Ẹri, Ẹrọ alawọ ewe Wa.

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Iyipada Igbohunsafẹfẹ Igbohunsafẹfẹ Amuṣiṣẹpọ fun MB/NB/UMPC/VGA, Nẹtiwọki DC-DC Power System, CCFL Back-ina Inverter,Drones, Motors, Automotive Electronics, pataki ohun elo.

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PANJIT PJQ5606

Awọn paramita pataki

Aami	Paramita	Rating		Awọn ẹya
Aami	Paramita	N-Kh	P-Ch	Awọn ẹya
VDS	Sisan-Orisun Foliteji	30	-30	V
VGS	Gate-Orisun Foliteji	±20	±20	V
ID	Imudanu Tẹsiwaju lọwọlọwọ, VGS(NP)=10V,Ta=25℃	14*	-12	A
ID	Imudanu Tẹsiwaju lọwọlọwọ, VGS(NP)=10V,Ta=70℃	7.6	-9.7	A
IDP a	Pulse Drain Lọwọlọwọ Idanwo, VGS(NP) = 10V	48	-48	A
EAS c	Agbara Avalanche, Pulu ẹyọkan, L = 0.5mH	20	20	mJ
IAS c	Avalanche Lọwọlọwọ, Ẹyọ Kanṣoṣo, L = 0.5mH	9	-9	A
PD	Lapapọ Pipada Agbara, Ta=25℃	5.25	5.25	W
TSTG	Ibi ipamọ otutu Ibiti	-55 si 175	-55 si 175	℃
TJ	Ibiti o gbona Junction Nṣiṣẹ	175	175	℃
RqJA b	Atako Gbona-Ipapọ si Ibaramu, Ipinle Iduroṣinṣin	60	60	℃/W
RqJC	Atako Gbona-Ipapọ si Ọran, Ipinle Iduroṣinṣin	6.25	6.25	℃/W

Aami	Paramita	Awọn ipo	Min.	Iru.	O pọju.	Ẹyọ
BVDSS	Sisan-Orisun didenukole Foliteji	VGS=0V, ID=250uA	30	---	---	V
RDS(ON) d	Aimi Sisan-Orisun On-Resistance	VGS=10V, ID=8A	---	14	18.5	mΩ
RDS(ON) d	Aimi Sisan-Orisun On-Resistance	VGS=4.5V, ID=5A	---	17	25	mΩ
VGS(th)	Foliteji Ala ẹnu-ọna	VGS=VDS, ID =250uA	1.3	1.8	2.3	V
IDSS	Sisan-Orisun jijo Lọwọlọwọ	VDS=20V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Sisan-Orisun jijo Lọwọlọwọ	VDS=20V, VGS=0V, TJ=85℃	---	---	30	uA
IGSS	Ẹnu-Orisun jijo Lọwọlọwọ	VGS=±20V, VDS=0V	---	---	± 100	nA
Rg	Resistance ẹnu-bode	VDS=0V, VGS=0V, f=1MHz	---	1.7	3.4	Ω
Qge	Total Gate agbara	VDS=15V, VGS=4.5V, ID=8A	---	5.2	---	nC
Qgse	Ẹnu-Orisun idiyele		---	1.0	---
Qgde	Ẹnubodè-Sisan agbara		---	2.8	---
Td (lori) e	Tan-On Idaduro Time	VDD=15V,RL=15R,IDS=1A,VGEN=10V,RG=6R.	---	6	---	ns
Tre	Aago dide		---	8.6	---
Td (pa) e	Pa Aago Idaduro		---	16	---
Tfe	Igba Irẹdanu Ewe		---	3.6	---
Sise	Agbara titẹ sii	VDS=15V, VGS=0V, f=1MHz	---	545	---	pF
Kose	O wu Agbara		---	95	---
Crsse	Yiyipada Gbigbe Capacitance		---	55	---