WSD30300DN56G N-ikanni 30V 300A DFN5X6-8 WINSOK MOSFET

awọn ọja

WSD30300DN56G N-ikanni 30V 300A DFN5X6-8 WINSOK MOSFET

kukuru apejuwe:

Nọmba Apa:WSD30300DN56G

BVDSS:30V

ID:300A

RDSON:0.7mΩ 

ikanni:N-ikanni

Apo:DFN5X6-8


Alaye ọja

Ohun elo

ọja Tags

WINSOK MOSFET ọja Akopọ

Foliteji ti WSD20100DN56 MOSFET jẹ 20V, lọwọlọwọ jẹ 90A, resistance jẹ 1.6mΩ, ikanni naa jẹ ikanni N-ikanni, ati package jẹ DFN5X6-8.

WINSOK MOSFET awọn agbegbe ohun elo

Awọn siga itanna MOSFET, drones MOSFET, awọn irinṣẹ itanna MOSFET, awọn ibon fascia MOSFET, PD MOSFET, awọn ohun elo ile kekere MOSFET.

WINSOK MOSFET ni ibamu si awọn nọmba ohun elo iyasọtọ miiran

AOS MOSFET AON6572.

POTENS Semikondokito MOSFET PDC394X.

MOSFET paramita

Aami

Paramita

Rating

Awọn ẹya

VDS

Sisan-Orisun Foliteji

20

V

VGS

Gate-Orisun Foliteji

± 12

V

ID@TC=25℃

Tesiwaju Sisan Lọwọlọwọ1

90

A

ID@TC=100℃

Tesiwaju Sisan Lọwọlọwọ1

48

A

IDM

Pulsed Sisan Lọwọlọwọ2

270

A

EAS

Nikan Polusi owusuwusu Energy3

80

mJ

IAS

Avalanche Lọwọlọwọ

40

A

PD@TC=25℃

Lapapọ Agbara ipadanu4

83

W

TSTG

Ibi ipamọ otutu Ibiti

-55 si 150

TJ

Ibiti o gbona Junction Nṣiṣẹ

-55 si 150

RθJA

Gbona Resistance Junction-ibaramu1(t10S)

20

/W

RθJA

Gbona Resistance Junction-ibaramu1(Ipo imurasilẹ)

55

/W

RθJC

Gbona Resistance Junction-ọran1

1.5

/W

 

Aami

Paramita

Awọn ipo

Min

Iru

O pọju

Ẹyọ

BVDSS

Sisan-Orisun didenukole Foliteji VGS=0V, ID=250uA

20

23

---

V

VGS(th)

Foliteji Ala ẹnu-ọna VGS=VDS, ID =250uA

0.5

0.68

1.0

V

RDS(ON)

Aimi Sisan-Orisun On-Resistance2 VGS=10V, ID=20A

---

1.6

2.0

RDS(ON)

Aimi Sisan-Orisun On-Resistance2 VGS=4.5V, ID=20A  

1.9

2.5

RDS(ON)

Aimi Sisan-Orisun On-Resistance2 VGS=2.5V, ID=20A

---

2.8

3.8

IDSS

Sisan-Orisun jijo Lọwọlọwọ VDS=16V, VGS=0V, TJ=25

---

---

1

uA

VDS=16V, VGS=0V, TJ=125

---

---

5

IGSS

Ẹnu-Orisun jijo Lọwọlọwọ VGS=±10V, VDS=0V

---

---

±10

uA

Rg

Resistance ẹnu-bode VDS=0V, VGS=0V, f=1MHz

---

1.2

---

Ω

Qg

Lapapọ idiyele ẹnu-ọna (10V) VDS=15V, VGS=10V, ID=20A

---

77

---

nC

Qgs

Ẹnu-Orisun idiyele

---

8.7

---

Qgd

Ẹnubodè-Sisan agbara

---

14

---

Td(lori)

Tan-On Idaduro Time VDD=15V, VGS=10V, RG=3,

ID=20A

---

10.2

---

ns

Tr

Aago dide

---

11.7

---

Td (pa)

Pa Aago Idaduro

---

56.4

---

Tf

Igba Irẹdanu Ewe

---

16.2

---

Ciss

Agbara titẹ sii VDS=10V, VGS=0V, f=1MHz

---

4307

---

pF

Kosi

O wu Agbara

---

501

---

Krss

Yiyipada Gbigbe Capacitance

---

321

---

IS

Tesiwaju Orisun Lọwọlọwọ1,5 VG=VD= 0V , Ipa Lọwọlọwọ

---

---

50

A

VSD

Diode Forward Foliteji2 VGS=0V, IS=1A, TJ=25

---

---

1.2

V

trr

Yipada Gbigba Time IF=20A, di/dt=100A/µs,

TJ= 25

---

22

---

nS

Qrr

Yipada Gbigba agbara

---

72

---

nC


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