WSD30L88DN56 Meji P-ikanni -30V -49A DFN5*6-8 WINSOK MOSFET
Gbogbogbo Apejuwe
WSD30L88DN56 jẹ trench iṣẹ ṣiṣe ti o ga julọ Dual P-Ch MOSFET pẹlu iwuwo sẹẹli ti o ga pupọ, eyiti o pese RDSON ti o dara julọ ati idiyele ẹnu-ọna fun pupọ julọ awọn ohun elo oluyipada ẹtu amuṣiṣẹpọ. WSD30L88DN56 pade RoHS ati ibeere Ọja Alawọ ewe 100% EAS iṣeduro pẹlu igbẹkẹle iṣẹ kikun ti a fọwọsi.
Awọn ẹya ara ẹrọ
Ilọsiwaju iwuwo sẹẹli giga ti imọ-ẹrọ Trench , Super Low Gate Charge , Idinku ipa ipa CdV/dt ti o dara , 100% EAS Ẹri , Ẹrọ alawọ ewe Wa.
Awọn ohun elo
Amuṣiṣẹpọ Igbohunsafẹfẹ Igbohunsafẹfẹ giga fun MB/NB/UMPC/VGA awọn ọja, awọn ohun elo ile kekere, ẹrọ itanna olumulo.
nọmba ohun elo ti o baamu
AOS
Awọn paramita pataki
Aami | Paramita | Rating | Awọn ẹya |
VDS | Sisan-Orisun Foliteji | -30 | V |
VGS | Gate-Orisun Foliteji | ±20 | V |
ID@TC=25℃ | Tesiwaju Sisan Lọwọlọwọ, VGS @ -10V1 | -49 | A |
ID@TC=100℃ | Tesiwaju Sisan Lọwọlọwọ, VGS @ -10V1 | -23 | A |
IDM | Pulsed Sisan Current2 | -120 | A |
EAS | Nikan Polusi owusuwusu Energy3 | 68 | mJ |
PD@TC=25℃ | Lapapọ Agbara ipadanu4 | 40 | W |
TSTG | Ibi ipamọ otutu Ibiti | -55 si 150 | ℃ |
TJ | Ibiti o gbona Junction Nṣiṣẹ | -55 si 150 | ℃ |
Kọ ifiranṣẹ rẹ nibi ki o si fi si wa