WSD40110DN56G N-ikanni 40V 110A DFN5X6-8 WINSOK MOSFET

awọn ọja

WSD40110DN56G N-ikanni 40V 110A DFN5X6-8 WINSOK MOSFET

kukuru apejuwe:

Nọmba Apa:WSD40110DN56G

BVDSS:40V

ID:110A

RDSON:2.5mΩ 

ikanni:N-ikanni

Apo:DFN5X6-8


Alaye ọja

Ohun elo

ọja Tags

WINSOK MOSFET ọja Akopọ

Foliteji ti WSD4080DN56 MOSFET jẹ 40V, lọwọlọwọ jẹ 85A, resistance jẹ 4.5mΩ, ikanni jẹ N-ikanni, ati package jẹ DFN5X6-8.

WINSOK MOSFET awọn agbegbe ohun elo

Awọn ohun elo kekere MOSFET, awọn ohun elo amusowo MOSFET, awọn mọto MOSFET.

WINSOK MOSFET ni ibamu si awọn nọmba ohun elo iyasọtọ miiran

AOS MOSFET AON623.STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.PANJIT MOSFET PJQ5442.POTENS Semikondokito MOSFET PDC496X.

MOSFET paramita

Aami

Paramita

Rating

Awọn ẹya

VDS

Sisan-Orisun Foliteji

40

V

VGS

Ẹnubodè-Source Foliteji

±20

V

ID@TC=25℃

Imugbẹ lọwọlọwọ lọwọlọwọ, VGS @ 10V1

85

A

ID@TC=100℃

Imugbẹ lọwọlọwọ lọwọlọwọ, VGS @ 10V1

58

A

IDM

Pulsed Sisan Lọwọlọwọ2

100

A

EAS

Nikan Polusi owusuwusu Energy3

110.5

mJ

IAS

Avalanche Lọwọlọwọ

47

A

PD@TC=25℃

Lapapọ Agbara ipadanu4

52.1

W

TSTG

Ibi ipamọ otutu Ibiti

-55 si 150

TJ

Ibiti o gbona Junction Nṣiṣẹ

-55 si 150

RθJA

Gbona Resistance Junction-Ambient1

62

/W

RθJC

Gbona Resistance Junction-Case1

2.4

/W

 

Aami

Paramita

Awọn ipo

Min.

Iru.

O pọju.

Ẹyọ

BVDSS

Sisan-Orisun didenukole Foliteji VGS=0V, ID=250uA

40

---

---

V

RDS(ON)

Aimi Sisan-Orisun On-Resistance2 VGS=10V, ID=10A

---

4.5

6.5

VGS=4.5V, ID=5A

---

6.4

8.5

VGS(th)

Foliteji Ala ẹnu-ọna VGS=VDS, ID =250uA

1.0

---

2.5

V

IDSS

Sisan-Orisun jijo Lọwọlọwọ VDS=32V, VGS=0V, TJ=25

---

---

1

uA

VDS=32V, VGS=0V, TJ=55

---

---

5

IGSS

Ẹnu-Orisun jijo Lọwọlọwọ VGS=±20V, VDS=0V

---

---

± 100

nA

gfs

Siwaju Transconductance VDS=10V, ID=5A

---

27

---

S

Qg

Lapapọ idiyele ẹnu-ọna (4.5V) VDS=20V, VGS=4.5V, ID=10A

---

20

---

nC

Qgs

Ẹnu-Orisun idiyele

---

5.8

---

Qgd

Ẹnubodè-Sisan agbara

---

9.5

---

Td(lori)

Tan-On Idaduro Time VDD=15V, VGS=10V RG=3.3Ω

ID=1A

---

15.2

---

ns

Tr

Aago dide

---

8.8

---

Td (pa)

Pa Aago Idaduro

---

74

---

Tf

Igba Irẹdanu Ewe

---

7

---

Ciss

Agbara titẹ sii VDS=15V, VGS=0V, f=1MHz

---

2354

---

pF

Kosi

O wu Agbara

---

215

---

Krss

Yiyipada Gbigbe Capacitance

---

175

---

IS

Tesiwaju Orisun Lọwọlọwọ1,5 VG=VD= 0V , Ipa Lọwọlọwọ

---

---

70

A

VSD

Diode Forward Foliteji2 VGS=0V, IS=1A, TJ=25

---

---

1

V


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