WSD40120DN56G N-ikanni 40V 120A DFN5X6-8 WINSOK MOSFET

awọn ọja

WSD40120DN56G N-ikanni 40V 120A DFN5X6-8 WINSOK MOSFET

kukuru apejuwe:

Nọmba Apa:WSD40120DN56G

BVDSS:40V

ID:120A

RDSON:1.4mΩ 

ikanni:N-ikanni

Apo:DFN5X6-8


Alaye ọja

Ohun elo

ọja Tags

WINSOK MOSFET ọja Akopọ

Foliteji ti WSD40120DN56G MOSFET jẹ 40V, lọwọlọwọ jẹ 120A, resistance jẹ 1.4mΩ, ikanni jẹ N-ikanni, ati package jẹ DFN5X6-8.

WINSOK MOSFET awọn agbegbe ohun elo

E-siga MOSFET, gbigba agbara alailowaya MOSFET, drones MOSFET, itọju iṣoogun MOSFET, awọn ṣaja ọkọ ayọkẹlẹ MOSFET, awọn oludari MOSFET, awọn ọja oni nọmba MOSFET, awọn ohun elo ile kekere MOSFET, ẹrọ itanna olumulo MOSFET.

WINSOK MOSFET ni ibamu si awọn nọmba ohun elo iyasọtọ miiran

AOS MOSFET AON6234,AON6232,AON623.STMicroelectronics MOSFET STL14N4F7AG.POTENS Semikondokito MOSFET PDC496X.

MOSFET paramita

Aami

Paramita

Rating

Awọn ẹya

VDS

Sisan-Orisun Foliteji

40

V

VGS

Ẹnubodè-Source Foliteji

±20

V

ID@TC= 25

Imugbẹ lọwọlọwọ lọwọlọwọ, VGS@ 10V1

120

A

ID@TC= 100

Imugbẹ lọwọlọwọ lọwọlọwọ, VGS@ 10V1

82

A

IDM

Pulsed Sisan Lọwọlọwọ2

400

A

EAS

Nikan Polusi owusuwusu Energy3

400

mJ

IAS

Avalanche Lọwọlọwọ

40

A

PD@TC= 25

Lapapọ Agbara ipadanu4

125

W

TSTG

Ibi ipamọ otutu Ibiti

-55 si 150

TJ

Ibiti o gbona Junction Nṣiṣẹ

-55 si 150

 

Aami

Paramita

Awọn ipo

Min.

Iru.

O pọju.

Ẹyọ

BVDSS

Sisan-Orisun didenukole Foliteji VGS= 0V, ID= 250uA

40

---

---

V

BVDSS/△TJ

BVDSSOlusodipupo iwọn otutu Itọkasi si 25, ID= 1mA

---

0.043

---

V/

RDS(ON)

Aimi Sisan-Orisun On-Resistance2 VGS=10V, ID= 20A

---

1.4

1.8

mΩ

RDS(ON)

Aimi Sisan-Orisun On-Resistance2 VGS=4.5V, ID= 20A

---

2.0

2.6

VGS(th)

Foliteji Ala ẹnu-ọna VGS=VDS, ID= 250uA

1.2

1.6

2.2

V

VGS(th)

VGS(th)Olusodipupo iwọn otutu

---

-6.94

---

mV/

IDSS

Sisan-Orisun jijo Lọwọlọwọ VDS= 32V, VGS= 0V, TJ= 25

---

---

1

uA

VDS= 32V, VGS= 0V, TJ= 55

---

---

5

IGSS

Ẹnu-Orisun jijo Lọwọlọwọ VGS=±20V, VDS= 0V

---

---

±100

nA

gfs

Siwaju Transconductance VDS= 5V, ID= 20A

---

53

---

S

Rg

Resistance ẹnu-bode VDS= 0V, VGS=0V, f=1MHz

---

1.0

---

Ω

Qg

Lapapọ idiyele ẹnu-ọna (10V) VDS= 15V, VGS= 10V, ID= 20A

---

45

---

nC

Qgs

Ẹnu-Orisun idiyele

---

12

---

Qgd

Ẹnubodè-Sisan agbara

---

18.5

---

Td(lori)

Tan-On Idaduro Time VDD= 15V, VGEN= 10V, RG= 3.3Ω, ID=20A,RL=15Ω.

---

18.5

---

ns

Tr

Aago dide

---

9

---

Td (pa)

Pa Aago Idaduro

---

58.5

---

Tf

Igba Irẹdanu Ewe

---

32

---

Ciss

Agbara titẹ sii VDS= 20V, VGS=0V, f=1MHz --- 3972 ---

pF

Kosi

O wu Agbara

---

1119 ---

Crss

Yiyipada Gbigbe Capacitance

---

82

---

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