WSD4098 Meji N-ikanni 40V 22A DFN5*6-8 WINSOK MOSFET

kukuru apejuwe:

Eyi jẹ banki agbara alailowaya oofa ti o ṣe idanimọ awọn foonu Apple laifọwọyi ati pe ko nilo imuṣiṣẹ bọtini. O ṣepọ 2.0/QC3.0/PA2.0/PD3.0/SCP/AFC input ki o si wu sare gbigba agbara Ilana. O jẹ ọja banki agbara alailowaya ti o ni ibamu pẹlu Apple/Samsung foonu alagbeka amuṣiṣẹpọ igbelaruge / awọn oluyipada-isalẹ, iṣakoso gbigba agbara batiri Li, itọkasi agbara tube oni-nọmba, gbigba agbara alailowaya oofa ati awọn iṣẹ miiran.

Nọmba awoṣe:WSD4098

BVDSS:40V

RDSON:7.8mΩ

ID:22A

Ikanni:Meji N-ikanni

Apo:DFN5 * 6-8

Ọja Ooru:Awọn foliteji ti WSD4098 MOSFET jẹ 40V, lọwọlọwọ is22A, awọn resistance ni 7.8mΩ, awọn ikanni ti wa ni Meji N-ikanni, ati awọn package jẹ DFN5 * 6-8.

Awọn ohun elo:Awọn siga e-siga, gbigba agbara alailowaya, awọn mọto, drones, itọju iṣoogun, ṣaja ọkọ ayọkẹlẹ, awọn olutona, awọn ọja oni-nọmba, awọn ohun elo ile kekere, ẹrọ itanna olumulo.

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Gbogbogbo Apejuwe

WSD4098DN56 jẹ trench iṣẹ ṣiṣe ti o ga julọ Dual N-Ch MOSFET pẹlu iwuwo sẹẹli ti o ga pupọ, eyiti o pese RDSON ti o dara julọ ati idiyele ẹnu-ọna fun pupọ julọ awọn ohun elo oluyipada ẹtu amuṣiṣẹpọ. WSD4098DN56 pade RoHS ati ibeere Ọja Alawọ ewe 100% EAS iṣeduro pẹlu igbẹkẹle iṣẹ kikun ti a fọwọsi.

Awọn ẹya ara ẹrọ

Ilọsiwaju iwuwo sẹẹli giga ti imọ-ẹrọ Trench, Agbara Ẹnubode Low Super, Idinku ipa ipa CdV/dt ti o dara julọ, 100% EAS Ẹri, Ẹrọ alawọ ewe Wa

Awọn ohun elo

Amuṣiṣẹpọ Igbohunsafẹfẹ Igbohunsafẹfẹ giga, Ayipada Buck fun MB/NB/UMPC/VGA, Nẹtiwọki DC-DC Eto Agbara, Yipada fifuye, E-siga, gbigba agbara alailowaya, Awọn mọto, drones, itọju iṣoogun, ṣaja ọkọ ayọkẹlẹ, awọn olutona, oni-nọmba awọn ọja, awọn ohun elo ile kekere, ẹrọ itanna olumulo.

nọmba ohun elo ti o baamu

AOS AON6884

Awọn paramita pataki

Aami	Paramita		Rating	Ẹyọ
Wọpọ-wonsi
VDSS	Sisan-Orisun Foliteji		40	V
VGSS	Gate-Orisun Foliteji		±20	V
TJ	O pọju Junction otutu		150	°C
TSTG	Ibi ipamọ otutu Ibiti		-55 si 150	°C
IS	Diode Tesiwaju Lọwọlọwọ	TA=25°C	11.4	A
ID	Tesiwaju Sisan Lọwọlọwọ	TA=25°C	22	A
ID	Tesiwaju Sisan Lọwọlọwọ			A
		TA=70°C	22
Emi DM b	Pulse Drain Lọwọlọwọ Idanwo	TA=25°C	88	A
PD	Ipilẹ agbara ti o pọju	T. =25°C	25	W
PD	Ipilẹ agbara ti o pọju	TC=70°C	10	W
RqJL	Gbona Resistance-Junction to asiwaju	Ipo imurasilẹ	5	°C/W
RqJA	Gbona Resistance-Junction to Ibaramu	t £10s	45	°C/W
RqJA	Gbona Resistance-Junction to Ibaramu	Ipinle imurasilẹ b	90	°C/W
MO AS d	Avalanche Lọwọlọwọ, Pulu ẹyọkan	L=0.5mH	28	A
E AS d	Avalanche Energy, Nikan polusi	L=0.5mH	39.2	mJ

Aami	Paramita	Awọn ipo Idanwo		Min.	Iru.	O pọju.	Ẹyọ
Aimi Abuda
BVDSS	Sisan-Orisun didenukole Foliteji	VGS=0V, IDS=250mA		40	-	-	V
IDSS	Zero Gate Foliteji Sisan Lọwọlọwọ	VDS=32V, VGS=0V		-	-	1	mA
IDSS	Zero Gate Foliteji Sisan Lọwọlọwọ						mA
			TJ=85°C	-	-	30
VGS(th)	Foliteji Ala ẹnu-ọna	VDS=VGS, ID=250mA		1.2	1.8	2.5	V
IGSS	Gate jijo Lọwọlọwọ	VGS=±20V, VDS=0V		-	-	± 100	nA
R DS(ON) e	Sisan-Orisun On-ipinle Resistance	VGS=10V, ID=14A		-	6.8	7.8	m W
R DS(ON) e	Sisan-Orisun On-ipinle Resistance	VGS=4.5V, IDS=12 A		-	9.0	11	m W
Diode Abuda
V SD e	Diode Forward Foliteji	ISD=1A, VGS=0V		-	0.75	1.1	V
trr	Yipada Gbigba Time	ISD=20A, dlSD/dt=100A/µs		-	23	-	ns
Qrr	Yipada Gbigba agbara	ISD=20A, dlSD/dt=100A/µs		-	13	-	nC
Awọn Abuda Yiyi f
RG	Resistance ẹnu-bode	VGS=0V,VDS=0V,F=1MHz		-	2.5	-	W
Ciss	Agbara titẹ sii	VGS=0V, VDS=20V, Igbohunsafẹfẹ = 1.0MHz		-	1370	Ọdun 1781	pF
Kosi	O wu Agbara			-	317	-
Krss	Yiyipada Gbigbe Capacitance			-	96	-
td(ON)	Tan-an Idaduro Time	VDD = 20V, RL=20W, IDS=1A, VGEN=10V, RG=6W		-	13.8	-	ns
tr	Tan-an Rise Time			-	8	-
td(PA)	Pa Aago Idaduro			-	30	-
tf	Pa Fall Time			-	21	-
Ẹnu Ẹnu Awọn abuda f
Qg	Total Gate agbara	VDS=20V, VGS=10V,IDS=6A		-	23	28	nC
Qg	Total Gate agbara	VDS=20V, VGS=4.5V, ID=6A		-	22	-
Qgth	Ala ẹnu-ọna idiyele			-	2.6	-
Qgs	Ẹnu-Orisun idiyele			-	4.7	-
Qgd	Ẹnubodè-Sisan agbara			-	3	-