WSD4280DN22 Meji P-ikanni -15V -4.6A DFN2X2-6L WINSOK MOSFET

awọn ọja

WSD4280DN22 Meji P-ikanni -15V -4.6A DFN2X2-6L WINSOK MOSFET

kukuru apejuwe:

Nọmba Apa:WSD4280DN22

BVDSS:-15V

ID:-4.6A

RDSON:47mΩ 

ikanni:Meji P-ikanni

Apo:DFN2X2-6L


Alaye ọja

Ohun elo

ọja Tags

WINSOK MOSFET ọja Akopọ

Awọn foliteji ti WSD4280DN22 MOSFET ni -15V, awọn ti isiyi jẹ -4.6A, awọn resistance ni 47mΩ, awọn ikanni ti wa ni Meji P-ikanni, ati awọn package jẹ DFN2X2-6L.

WINSOK MOSFET awọn agbegbe ohun elo

Bidirectional ìdènà yipada; Awọn ohun elo iyipada DC-DC; gbigba agbara Li-batiri; MOSFET E-siga, gbigba agbara alailowaya MOSFET, gbigba agbara ọkọ ayọkẹlẹ MOSFET, MOSFET oludari, MOSFET ọja oni-nọmba, awọn ohun elo ile kekere MOSFET, ẹrọ itanna onibara MOSFET.

WINSOK MOSFET ni ibamu si awọn nọmba ohun elo iyasọtọ miiran

PANJIT MOSFET PJQ2815

MOSFET paramita

Aami

Paramita

Rating

Awọn ẹya

VDS

Sisan-Orisun Foliteji

-15

V

VGS

Gate-Orisun Foliteji

±8

V

ID@Tc=25℃

Imugbẹ lọwọlọwọ lọwọlọwọ, VGS= -4.5V1 

-4.6

A

IDM

300μS Imugbẹ Pulsed Lọwọlọwọ, (VGS= -4.5V)

-15

A

PD 

Ipilẹ agbara ti o wa loke TA = 25°C (Akiyesi 2)

1.9

W

TSTG,TJ 

Ibi ipamọ otutu Ibiti

-55 si 150

RÉJA

Gbona Resistance Junction-ibaramu1

65

℃/W

RθJC

Gbona Resistance Junction-Case1

50

℃/W

Awọn abuda Itanna (TJ=25 ℃, ayafi ti a ba ṣe akiyesi bibẹẹkọ)

Aami

Paramita

Awọn ipo

Min.

Iru.

O pọju.

Ẹyọ

BVDSS 

Sisan-Orisun didenukole Foliteji VGS= 0V, ID= -250uA

-15

---

---

V

△BVDSS/△TJ

BVDSS otutu olùsọdipúpọ Itọkasi si 25 ℃, ID= -1mA

---

-0.01

---

V/℃

RDS(ON)

Aimi Sisan-Orisun On-Resistance2  VGS= -4.5V, ID=-1A

---

47

61

VGS= -2.5V, ID=-1A

---

61

80

VGS= -1.8V, ID=-1A

---

90

150

VGS(th)

Foliteji Ala ẹnu-ọna VGS=VDS, ID= -250uA

-0.4

-0.62

-1.2

V

△VGS(th) 

VGS(th)Olusodipupo iwọn otutu

---

3.13

---

mV/℃

IDSS

Sisan-Orisun jijo Lọwọlọwọ VDS= -10V, VGS= 0V, TJ=25℃

---

---

-1

uA

VDS= -10V, VGS= 0V, TJ=55℃

---

---

-5

IGSS

Ẹnu-Orisun jijo Lọwọlọwọ VGS= ± 12V, VDS= 0V

---

---

± 100

nA

gfs

Siwaju Transconductance VDS= -5V, ID=-1A

---

10

---

S

Rg 

Resistance ẹnu-bode VDS= 0V, VGS= 0V, f=1MHz

---

2

---

Ω

Qg 

Lapapọ Owo Ẹnubode (-4.5V)

VDS= -10V, VGS= -4.5V, ID= -4.6A

---

9.5

---

nC

Qgs 

Ẹnu-Orisun idiyele

---

1.4

---

Qgd 

Ẹnubodè-Sisan agbara

---

2.3

---

Td(lori)

Tan-On Idaduro Time VDD= -10V,VGS= -4.5V, RG=1Ω

ID= -3.9A,

---

15

---

ns

Tr 

Aago dide

---

16

---

Td (pa)

Pa Aago Idaduro

---

30

---

Tf 

Igba Irẹdanu Ewe

---

10

---

Ciss 

Agbara titẹ sii VDS= -10V, VGS= 0V, f=1MHz

---

781

---

pF

Kosi

O wu Agbara

---

98

---

Crss 

Yiyipada Gbigbe Capacitance

---

96

---


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