WSD45N10GDN56 N-ikanni 100V 45A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET ọja Akopọ
Foliteji ti WSD45N10GDN56 MOSFET jẹ 100V, lọwọlọwọ jẹ 45A, resistance jẹ 14.5mΩ, ikanni jẹ N-ikanni, ati package jẹ DFN5X6-8.
WINSOK MOSFET awọn agbegbe ohun elo
E-siga MOSFET, Ailokun gbigba agbara MOSFET, Motors MOSFET, drones MOSFET, egbogi itoju MOSFET, ọkọ ayọkẹlẹ ṣaja MOSFET, olutona MOSFET, oni awọn ọja MOSFET, kekere ìdílé ohun elo MOSFET, olumulo Electronics MOSFET.
WINSOK MOSFET ni ibamu si awọn nọmba ohun elo iyasọtọ miiran
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PJQ5476AL.POTENS Semikondokito MOSFET PDC966X.
MOSFET paramita
| Aami | Paramita | Rating | Awọn ẹya |
| VDS | Sisan-Orisun Foliteji | 100 | V |
| VGS | Ẹnubodè-Source Foliteji | ±20 | V |
| ID@TC= 25℃ | Imugbẹ lọwọlọwọ lọwọlọwọ, VGS@ 10V | 45 | A |
| ID@TC= 100℃ | Imugbẹ lọwọlọwọ lọwọlọwọ, VGS@ 10V | 33 | A |
| ID@TA= 25℃ | Imugbẹ lọwọlọwọ lọwọlọwọ, VGS@ 10V | 12 | A |
| ID@TA= 70℃ | Imugbẹ lọwọlọwọ lọwọlọwọ, VGS@ 10V | 9.6 | A |
| IDMa | Pulsed Sisan Lọwọlọwọ | 130 | A |
| EASb | Nikan Polusi owusuwusu Energy | 169 | mJ |
| IASb | Avalanche Lọwọlọwọ | 26 | A |
| PD@TC= 25℃ | Lapapọ Agbara ipadanu | 95 | W |
| PD@TA= 25℃ | Lapapọ Agbara ipadanu | 5.0 | W |
| TSTG | Ibi ipamọ otutu Ibiti | -55 si 150 | ℃ |
| TJ | Ibiti o gbona Junction Nṣiṣẹ | -55 si 150 | ℃ |
| Aami | Paramita | Awọn ipo | Min. | Iru. | O pọju. | Ẹyọ |
| BVDSS | Sisan-Orisun didenukole Foliteji | VGS= 0V, ID= 250uA | 100 | --- | --- | V |
| △BVDSS/△TJ | BVDSS otutu olùsọdipúpọ | Itọkasi si 25℃, ID= 1mA | --- | 0.0 | --- | V/℃ |
| RDS(ON)d | Aimi Sisan-Orisun On-Resistance2 | VGS= 10V, ID= 26A | --- | 14.5 | 17.5 | mΩ |
| VGS(th) | Foliteji Ala ẹnu-ọna | VGS=VDS, ID= 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Olusodipupo iwọn otutu | --- | -5 | mV/℃ | ||
| IDSS | Sisan-Orisun jijo Lọwọlọwọ | VDS= 80V, VGS= 0V, TJ= 25℃ | --- | - | 1 | uA |
| VDS= 80V, VGS= 0V, TJ= 55℃ | --- | - | 30 | |||
| IGSS | Ẹnu-Orisun jijo Lọwọlọwọ | VGS=±20V, VDS= 0V | --- | - | ±100 | nA |
| Rge | Resistance ẹnu-bode | VDS= 0V, VGS= 0V, f=1MHz | --- | 1.0 | --- | Ω |
| Qge | Lapapọ idiyele ẹnu-ọna (10V) | VDS= 50V, VGS= 10V, ID= 26A | --- | 42 | 59 | nC |
| Qgse | Ẹnu-Orisun idiyele | --- | 12 | -- | ||
| Qgde | Ẹnubodè-Sisan agbara | --- | 12 | --- | ||
| Td(lori)e | Tan-On Idaduro Time | VDD= 30V, VGEN= 10V, RG=6Ω ID=1A ,RL=30Ω | --- | 19 | 35 | ns |
| Tre | Aago dide | --- | 9 | 17 | ||
| Td (pa)e | Pa Aago Idaduro | --- | 36 | 65 | ||
| Tfe | Igba Irẹdanu Ewe | --- | 22 | 40 | ||
| Sise | Agbara titẹ sii | VDS= 30V, VGS= 0V, f=1MHz | --- | 1800 | --- | pF |
| Kose | O wu Agbara | --- | 215 | --- | ||
| Crsse | Yiyipada Gbigbe Capacitance | --- | 42 | --- |
