WSD6040DN56 N-ikanni 60V 36A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET ọja Akopọ
Foliteji ti WSD6040DN56 MOSFET jẹ 60V, lọwọlọwọ jẹ 36A, resistance jẹ 14mΩ, ikanni naa jẹ ikanni N-ikanni, ati package jẹ DFN5X6-8.
WINSOK MOSFET awọn agbegbe ohun elo
E-siga MOSFET, Ailokun gbigba agbara MOSFET, Motors MOSFET, drones MOSFET, egbogi itoju MOSFET, ọkọ ayọkẹlẹ ṣaja MOSFET, olutona MOSFET, oni awọn ọja MOSFET, kekere ìdílé ohun elo MOSFET, olumulo Electronics MOSFET.
WINSOK MOSFET ni ibamu si awọn nọmba ohun elo iyasọtọ miiran
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL8DN6LF6AG.PANJIT MOSFET PSMQC12N6LS1.POTENS Semikondokito MOSFET PDC6964X.
MOSFET paramita
| Aami | Paramita | Rating | Awọn ẹya | ||
| VDS | Sisan-Orisun Foliteji | 60 | V | ||
| VGS | Gate-Orisun Foliteji | ±20 | V | ||
| ID | Tesiwaju Sisan Lọwọlọwọ | TC=25°C | 36 | A | |
| TC=100°C | 22 | ||||
| ID | Tesiwaju Sisan Lọwọlọwọ | TA=25°C | 8.4 | A | |
| TA=100°C | 6.8 | ||||
| IDMa | Pulsed Sisan Lọwọlọwọ | TC=25°C | 140 | A | |
| PD | Ipilẹ agbara ti o pọju | TC=25°C | 37.8 | W | |
| TC=100°C | 15.1 | ||||
| PD | Ipilẹ agbara ti o pọju | TA=25°C | 2.08 | W | |
| TA=70°C | 1.33 | ||||
| IAS c | Avalanche Lọwọlọwọ, Pulu ẹyọkan | L=0.5mH | 16 | A | |
| EASc | Nikan Polusi owusuwusu Energy | L=0.5mH | 64 | mJ | |
| IS | Diode Tesiwaju Lọwọlọwọ | TC=25°C | 18 | A | |
| TJ | O pọju Junction otutu | 150 | ℃ | ||
| TSTG | Ibi ipamọ otutu Ibiti | -55 si 150 | ℃ | ||
| RθJAb | Gbona Resistance Junction to ibaramu | Ipo imurasilẹ | 60 | ℃/W | |
| RθJC | Gbona Resistance-Junction to Case | Ipo imurasilẹ | 3.3 | ℃/W | |
| Aami | Paramita | Awọn ipo | Min. | Iru. | O pọju. | Ẹyọ | |
| Aimi | |||||||
| V(BR) DSS | Sisan-Orisun didenukole Foliteji | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Zero Gate Foliteji Sisan Lọwọlọwọ | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ=85°C | 30 | ||||||
| IGSS | Gate jijo Lọwọlọwọ | VGS = ± 20V, VDS = 0V | ± 100 | nA | |||
| Lori Awọn abuda | |||||||
| VGS(TH) | Foliteji Ala ẹnu-ọna | VGS = VDS, ID = 250µA | 1 | 1.6 | 2.5 | V | |
| RDS(lori)d | Sisan-Orisun On-ipinle Resistance | VGS = 10V, ID = 25A | 14 | 17.5 | mΩ | ||
| VGS = 4.5V, ID = 20A | 19 | 22 | mΩ | ||||
| Yipada | |||||||
| Qg | Total Gate agbara | VDS=30V VGS=10V ID=25A | 42 | nC | |||
| Qgs | Ẹnubodè-ekan idiyele | 6.4 | nC | ||||
| Qgd | Ẹnubodè-Sisan agbara | 9.6 | nC | ||||
| td (lori) | Tan-an Idaduro Time | VGEN=10V VDD=30V ID=1A RG=6Ω RL=30Ω | 17 | ns | |||
| tr | Tan-an Rise Time | 9 | ns | ||||
| td (pa) | Pa Aago Idaduro | 58 | ns | ||||
| tf | Pa Fall Time | 14 | ns | ||||
| Rg | Gat resistance | VGS = 0V, VDS = 0V, f = 1MHz | 1.5 | Ω | |||
| Ìmúdàgba | |||||||
| Ciss | Ni Capacitance | VGS=0V VDS = 30V f = 1MHz | 2100 | pF | |||
| Kosi | Jade Agbara | 140 | pF | ||||
| Krss | Yiyipada Gbigbe Capacitance | 100 | pF | ||||
| Imugbẹ-Orisun Diode abuda ati iwontun-wonsi to pọju | |||||||
| IS | Tesiwaju Orisun Lọwọlọwọ | VG=VD=0V, Fi agbara mu lọwọlọwọ | 18 | A | |||
| ISM | Pulsed Orisun Current3 | 35 | A | ||||
| VSDd | Diode Forward Foliteji | ISD = 20A, VGS=0V | 0.8 | 1.3 | V | ||
| trr | Yipada Gbigba Time | ISD=25A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Yipada Gbigba agbara | 33 | nC | ||||
