WSD6060DN56 N-ikanni 60V 65A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET ọja Akopọ
Foliteji ti WSD6060DN56 MOSFET jẹ 60V, lọwọlọwọ jẹ 65A, resistance jẹ 7.5mΩ, ikanni jẹ N-ikanni, ati package jẹ DFN5X6-8.
WINSOK MOSFET awọn agbegbe ohun elo
E-siga MOSFET, Ailokun gbigba agbara MOSFET, Motors MOSFET, drones MOSFET, egbogi itoju MOSFET, ọkọ ayọkẹlẹ ṣaja MOSFET, olutona MOSFET, oni awọn ọja MOSFET, kekere ìdílé ohun elo MOSFET, olumulo Electronics MOSFET.
WINSOK MOSFET ni ibamu si awọn nọmba ohun elo iyasọtọ miiran
STMicroelectronics MOSFET STL5DN6F7.PANJIT MOSFET PSMQC73N6NS1.POTENS Semikondokito MOSFET PDC696X.
MOSFET paramita
| Aami | Paramita | Rating | Ẹyọ | |
| Wọpọ-wonsi | ||||
| VDSS | Sisan-Orisun Foliteji | 60 | V | |
| VGSS | Gate-Orisun Foliteji | ±20 | V | |
| TJ | O pọju Junction otutu | 150 | °C | |
| TSTG | Ibi ipamọ otutu Ibiti | -55 si 150 | °C | |
| IS | Diode Tesiwaju Lọwọlọwọ | Tc=25°C | 30 | A |
| ID | Tesiwaju Sisan Lọwọlọwọ | Tc=25°C | 65 | A |
| Tc= 70°C | 42 | |||
| Emi DM b | Pulse Drain Lọwọlọwọ Idanwo | Tc=25°C | 250 | A |
| PD | Ipilẹ agbara ti o pọju | Tc=25°C | 62.5 | W |
| TC= 70°C | 38 | |||
| RqJL | Gbona Resistance-Junction to asiwaju | Ipo imurasilẹ | 2.1 | °C/W |
| RqJA | Gbona Resistance-Junction to Ibaramu | t £ 10s | 45 | °C/W |
| Ipo imurasilẹb | 50 | |||
| MO AS d | Avalanche Lọwọlọwọ, Pulu ẹyọkan | L=0.5mH | 18 | A |
| E AS d | Avalanche Energy, Nikan polusi | L=0.5mH | 81 | mJ |
| Aami | Paramita | Awọn ipo Idanwo | Min. | Iru. | O pọju. | Ẹyọ | |
| Aimi Abuda | |||||||
| BVDSS | Sisan-Orisun didenukole Foliteji | VGS= 0V, IDS= 250mA | 60 | - | - | V | |
| IDSS | Zero Gate Foliteji Sisan Lọwọlọwọ | VDS= 48V, VGS= 0V | - | - | 1 | mA | |
| TJ=85°C | - | - | 30 | ||||
| VGS(th) | Foliteji Ala ẹnu-ọna | VDS=VGS, IDS= 250mA | 1.2 | 1.5 | 2.5 | V | |
| IGSS | Gate jijo Lọwọlọwọ | VGS= 20V, VDS= 0V | - | - | ± 100 | nA | |
| R DS(ON) 3 | Sisan-Orisun On-ipinle Resistance | VGS= 10V, IDS= 20A | - | 7.5 | 10 | m W | |
| VGS= 4.5V, IDS= 15 A | - | 10 | 15 | ||||
| Diode Abuda | |||||||
| V SD | Diode Forward Foliteji | ISD= 1A, VGS= 0V | - | 0.75 | 1.2 | V | |
| trr | Yipada Gbigba Time | ISD=20A, dlSD /dt=100A/µs | - | 42 | - | ns | |
| Qrr | Yipada Gbigba agbara | - | 36 | - | nC | ||
| Ìmúdàgba Abuda3,4 | |||||||
| RG | Resistance ẹnu-bode | VGS= 0V,VDS=0V,F=1MHz | - | 1.5 | - | W | |
| Ciss | Agbara titẹ sii | VGS= 0V, VDS= 30V, F=1.0MHz Ω | - | 1340 | - | pF | |
| Coss | O wu Agbara | - | 270 | - | |||
| Crss | Yiyipada Gbigbe Capacitance | - | 40 | - | |||
| td(ON) | Tan-an Idaduro Time | VDD=30V, IDS=1A, VGEN=10V, RG=6Ω. | - | 15 | - | ns | |
| tr | Tan-an Rise Time | - | 6 | - | |||
| td(PA) | Pa Aago Idaduro | - | 33 | - | |||
| tf | Pa Fall Time | - | 30 | - | |||
| Ẹnu Ẹnu Awọn abuda 3,4 | |||||||
| Qg | Total Gate agbara | VDS= 30V, VGS= 4.5V, IDS= 20A | - | 13 | - | nC | |
| Qg | Total Gate agbara | VDS= 30V, VGS= 10V, IDS= 20A | - | 27 | - | ||
| Qgth | Ala ẹnu-ọna idiyele | - | 4.1 | - | |||
| Qgs | Ẹnu-Orisun idiyele | - | 5 | - | |||
| Qgd | Ẹnubodè-Sisan agbara | - | 4.2 | - | |||
