WSD6070DN56 N-ikanni 60V 80A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET ọja Akopọ
Foliteji ti WSD6070DN56 MOSFET jẹ 60V, lọwọlọwọ jẹ 80A, resistance jẹ 7.3mΩ, ikanni jẹ N-ikanni, ati package jẹ DFN5X6-8.
WINSOK MOSFET awọn agbegbe ohun elo
E-siga MOSFET, Ailokun gbigba agbara MOSFET, Motors MOSFET, drones MOSFET, egbogi itoju MOSFET, ọkọ ayọkẹlẹ ṣaja MOSFET, olutona MOSFET, oni awọn ọja MOSFET, kekere ìdílé ohun elo MOSFET, olumulo Electronics MOSFET.
WINSOK MOSFET ni ibamu si awọn nọmba ohun elo iyasọtọ miiran
POTENS Semikondokito MOSFET PDC696X.
MOSFET paramita
| Aami | Paramita | Rating | Awọn ẹya |
| VDS | Sisan-Orisun Foliteji | 60 | V |
| VGS | Ẹnubodè-Source Foliteji | ±20 | V |
| TJ | O pọju Junction otutu | 150 | °C |
| ID | Ibi ipamọ otutu Ibiti | -55 si 150 | °C |
| IS | Diode Tesiwaju Iwaju Lọwọlọwọ,TC=25°C | 80 | A |
| ID | Imugbẹ lọwọlọwọ lọwọlọwọ, VGS=10V,TC=25°C | 80 | A |
| Imugbẹ lọwọlọwọ lọwọlọwọ, VGS=10V,TC=100°C | 66 | A | |
| IDM | Imugbẹ Pulsed Lọwọlọwọ, TC=25°C | 300 | A |
| PD | Ipilẹ agbara ti o pọju,TC=25°C | 150 | W |
| Ipilẹ agbara ti o pọju,TC=100°C | 75 | W | |
| RθJA | Atako Gbona-Ipapọ si Ibaramu ,t =10s ̀ | 50 | °C/W |
| Atako Gbona-Ipapọ si Ibaramu, Ipinle Iduroṣinṣin | 62.5 | °C/W | |
| RqJC | Gbona Resistance-Junction to Case | 1 | °C/W |
| IAS | Avalanche Lọwọlọwọ, Ẹyọ Kanṣoṣo, L = 0.5mH | 30 | A |
| EAS | Agbara Avalanche, Pulu ẹyọkan, L = 0.5mH | 225 | mJ |
| Aami | Paramita | Awọn ipo | Min. | Iru. | O pọju. | Ẹyọ |
| BVDSS | Sisan-Orisun didenukole Foliteji | VGS= 0V, ID= 250uA | 60 | --- | --- | V |
| △BVDSS/△TJ | BVDSSOlusodipupo iwọn otutu | Itọkasi si 25℃, ID= 1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Aimi Sisan-Orisun On-Resistance2 | VGS=10V, ID= 40A | --- | 7.0 | 9.0 | mΩ |
| VGS(th) | Foliteji Ala ẹnu-ọna | VGS=VDS, ID= 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Olusodipupo iwọn otutu | --- | -6.94 | --- | mV/℃ | |
| IDSS | Sisan-Orisun jijo Lọwọlọwọ | VDS= 48V, VGS= 0V, TJ= 25℃ | --- | --- | 2 | uA |
| VDS= 48V, VGS= 0V, TJ= 55℃ | --- | --- | 10 | |||
| IGSS | Ẹnu-Orisun jijo Lọwọlọwọ | VGS=±20V, VDS= 0V | --- | --- | ±100 | nA |
| gfs | Siwaju Transconductance | VDS= 5V, ID= 20A | --- | 50 | --- | S |
| Rg | Resistance ẹnu-bode | VDS= 0V, VGS=0V, f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Lapapọ idiyele ẹnu-ọna (10V) | VDS= 30V, VGS= 10V, ID= 40A | --- | 48 | --- | nC |
| Qgs | Ẹnu-Orisun idiyele | --- | 17 | --- | ||
| Qgd | Ẹnubodè-Sisan agbara | --- | 12 | --- | ||
| Td(lori) | Tan-On Idaduro Time | VDD= 30V, VGEN= 10V, RG=1Ω, ID=1A ,RL=15Ω. | --- | 16 | --- | ns |
| Tr | Aago dide | --- | 10 | --- | ||
| Td (pa) | Pa Aago Idaduro | --- | 40 | --- | ||
| Tf | Igba Irẹdanu Ewe | --- | 35 | --- | ||
| Ciss | Agbara titẹ sii | VDS= 30V, VGS=0V, f=1MHz | --- | 2680 | --- | pF |
| Kosi | O wu Agbara | --- | 386 | --- | ||
| Crss | Yiyipada Gbigbe Capacitance | --- | 160 | --- |
