WSD60N10GDN56 N-ikanni 100V 60A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET ọja Akopọ
Foliteji ti WSD60N10GDN56 MOSFET jẹ 100V, lọwọlọwọ jẹ 60A, resistance jẹ 8.5mΩ, ikanni jẹ ikanni N-ikanni, ati package jẹ DFN5X6-8.
WINSOK MOSFET awọn agbegbe ohun elo
E-siga MOSFET, Ailokun gbigba agbara MOSFET, Motors MOSFET, drones MOSFET, egbogi itoju MOSFET, ọkọ ayọkẹlẹ ṣaja MOSFET, olutona MOSFET, oni awọn ọja MOSFET, kekere ìdílé ohun elo MOSFET, olumulo Electronics MOSFET.
Awọn aaye ohun elo MOSFETWINSOK MOSFET ni ibamu si awọn nọmba ohun elo ami iyasọtọ miiran
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MOSFET paramita
Aami | Paramita | Rating | Awọn ẹya |
VDS | Sisan-Orisun Foliteji | 100 | V |
VGS | Gate-Orisun Foliteji | ±20 | V |
ID@TC=25℃ | Tesiwaju Sisan Lọwọlọwọ | 60 | A |
IDP | Pulsed Sisan Lọwọlọwọ | 210 | A |
EAS | Avalanche Energy, Nikan polusi | 100 | mJ |
PD@TC=25℃ | Lapapọ Agbara ipadanu | 125 | W |
TSTG | Ibi ipamọ otutu Ibiti | -55 si 150 | ℃ |
TJ | Ibiti o gbona Junction Nṣiṣẹ | -55 si 150 | ℃ |
Aami | Paramita | Awọn ipo | Min. | Iru. | O pọju. | Ẹyọ |
BVDSS | Sisan-Orisun didenukole Foliteji | VGS= 0V, ID= 250uA | 100 | --- | --- | V |
Aimi Sisan-Orisun On-Resistance | VGS=10V,ID=10A. | --- | 8.5 | 10.0 | mΩ | |
RDS(ON) | VGS=4.5V,ID=10A. | --- | 9.5 | 12.0 | mΩ | |
VGS(th) | Foliteji Ala ẹnu-ọna | VGS=VDS, ID= 250uA | 1.0 | --- | 2.5 | V |
IDSS | Sisan-Orisun jijo Lọwọlọwọ | VDS= 80V, VGS= 0V, TJ=25℃ | --- | --- | 1 | uA |
IGSS | Ẹnu-Orisun jijo Lọwọlọwọ | VGS= 20V, VDS= 0V | --- | --- | ± 100 | nA |
Qg | Lapapọ idiyele ẹnu-ọna (10V) | VDS= 50V, VGS= 10V, ID= 25A | --- | 49.9 | --- | nC |
Qgs | Ẹnu-Orisun idiyele | --- | 6.5 | --- | ||
Qgd | Ẹnubodè-Sisan agbara | --- | 12.4 | --- | ||
Td(lori) | Tan-On Idaduro Time | VDD= 50V, VGS= 10V,RG= 2.2Ω, ID= 25A | --- | 20.6 | --- | ns |
Tr | Aago dide | --- | 5 | --- | ||
Td (pa) | Pa Aago Idaduro | --- | 51.8 | --- | ||
Tf | Igba Irẹdanu Ewe | --- | 9 | --- | ||
Ciss | Agbara titẹ sii | VDS= 50V, VGS= 0V, f=1MHz | --- | 2604 | --- | pF |
Kosi | O wu Agbara | --- | 362 | --- | ||
Crss | Yiyipada Gbigbe Capacitance | --- | 6.5 | --- | ||
IS | Tesiwaju Orisun Lọwọlọwọ | VG=VD= 0V , Ipa Lọwọlọwọ | --- | --- | 60 | A |
ISP | Pulsed Orisun Lọwọlọwọ | --- | --- | 210 | A | |
VSD | Diode Forward Foliteji | VGS= 0V, IS= 12A, TJ=25℃ | --- | --- | 1.3 | V |
trr | Yipada Gbigba Time | IF=12A,dI/dt=100A/µs,TJ=25℃ | --- | 60.4 | --- | nS |
Qrr | Yipada Gbigba agbara | --- | 106.1 | --- | nC |