WSD60N10GDN56 N-ikanni 100V 60A DFN5X6-8 WINSOK MOSFET

awọn ọja

WSD60N10GDN56 N-ikanni 100V 60A DFN5X6-8 WINSOK MOSFET

kukuru apejuwe:

Nọmba Apa:WSD60N10GDN56

BVDSS:100V

ID:60A

RDSON:8.5mΩ

ikanni:N-ikanni

Apo:DFN5X6-8


Alaye ọja

Ohun elo

ọja Tags

WINSOK MOSFET ọja Akopọ

Foliteji ti WSD60N10GDN56 MOSFET jẹ 100V, lọwọlọwọ jẹ 60A, resistance jẹ 8.5mΩ, ikanni jẹ ikanni N-ikanni, ati package jẹ DFN5X6-8.

WINSOK MOSFET awọn agbegbe ohun elo

E-siga MOSFET, Ailokun gbigba agbara MOSFET, Motors MOSFET, drones MOSFET, egbogi itoju MOSFET, ọkọ ayọkẹlẹ ṣaja MOSFET, olutona MOSFET, oni awọn ọja MOSFET, kekere ìdílé ohun elo MOSFET, olumulo Electronics MOSFET.

Awọn aaye ohun elo MOSFETWINSOK MOSFET ni ibamu si awọn nọmba ohun elo ami iyasọtọ miiran

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MOSFET paramita

Aami

Paramita

Rating

Awọn ẹya

VDS

Sisan-Orisun Foliteji

100

V

VGS

Gate-Orisun Foliteji

±20

V

ID@TC=25℃

Tesiwaju Sisan Lọwọlọwọ

60

A

IDP

Pulsed Sisan Lọwọlọwọ

210

A

EAS

Avalanche Energy, Nikan polusi

100

mJ

PD@TC=25℃

Lapapọ Agbara ipadanu

125

W

TSTG

Ibi ipamọ otutu Ibiti

-55 si 150

TJ 

Ibiti o gbona Junction Nṣiṣẹ

-55 si 150

 

Aami

Paramita

Awọn ipo

Min.

Iru.

O pọju.

Ẹyọ

BVDSS 

Sisan-Orisun didenukole Foliteji VGS= 0V, ID= 250uA

100

---

---

V

  Aimi Sisan-Orisun On-Resistance VGS=10V,ID=10A.

---

8.5

10.0

RDS(ON)

VGS=4.5V,ID=10A.

---

9.5

12.0

VGS(th)

Foliteji Ala ẹnu-ọna VGS=VDS, ID= 250uA

1.0

---

2.5

V

IDSS

Sisan-Orisun jijo Lọwọlọwọ VDS= 80V, VGS= 0V, TJ=25℃

---

---

1

uA

IGSS

Ẹnu-Orisun jijo Lọwọlọwọ VGS= 20V, VDS= 0V

---

---

± 100

nA

Qg 

Lapapọ idiyele ẹnu-ọna (10V) VDS= 50V, VGS= 10V, ID= 25A

---

49.9

---

nC

Qgs 

Ẹnu-Orisun idiyele

---

6.5

---

Qgd 

Ẹnubodè-Sisan agbara

---

12.4

---

Td(lori)

Tan-On Idaduro Time VDD= 50V, VGS= 10V,RG= 2.2Ω, ID= 25A

---

20.6

---

ns

Tr 

Aago dide

---

5

---

Td (pa)

Pa Aago Idaduro

---

51.8

---

Tf 

Igba Irẹdanu Ewe

---

9

---

Ciss 

Agbara titẹ sii VDS= 50V, VGS= 0V, f=1MHz

---

2604

---

pF

Kosi

O wu Agbara

---

362

---

Crss 

Yiyipada Gbigbe Capacitance

---

6.5

---

IS 

Tesiwaju Orisun Lọwọlọwọ VG=VD= 0V , Ipa Lọwọlọwọ

---

---

60

A

ISP

Pulsed Orisun Lọwọlọwọ

---

---

210

A

VSD

Diode Forward Foliteji VGS= 0V, IS= 12A, TJ=25℃

---

---

1.3

V

trr 

Yipada Gbigba Time IF=12A,dI/dt=100A/µs,TJ=25℃

---

60.4

---

nS

Qrr 

Yipada Gbigba agbara

---

106.1

---

nC


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