WSD60N10GDN56 N-ikanni 100V 60A DFN5X6-8 WINSOK MOSFET

awọn ọja

WSD60N10GDN56 N-ikanni 100V 60A DFN5X6-8 WINSOK MOSFET

kukuru apejuwe:

Nọmba Apa:WSD60N10GDN56

BVDSS:100V

ID:60A

RDSON:8.5mΩ

ikanni:N-ikanni

Apo:DFN5X6-8


Alaye ọja

Ohun elo

ọja Tags

WINSOK MOSFET ọja Akopọ

Foliteji ti WSD60N10GDN56 MOSFET jẹ 100V, lọwọlọwọ jẹ 60A, resistance jẹ 8.5mΩ, ikanni naa jẹ ikanni N-ikanni, ati package jẹ DFN5X6-8.

WINSOK MOSFET awọn agbegbe ohun elo

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Awọn aaye ohun elo MOSFETWINSOK MOSFET ni ibamu si awọn nọmba ohun elo ami iyasọtọ miiran

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MOSFET paramita

Aami

Paramita

Rating

Awọn ẹya

VDS

Sisan-Orisun Foliteji

100

V

VGS

Gate-Orisun Foliteji

±20

V

ID@TC=25℃

Tesiwaju Sisan Lọwọlọwọ

60

A

IDP

Pulsed Sisan Lọwọlọwọ

210

A

EAS

Avalanche Energy, Nikan polusi

100

mJ

PD@TC=25℃

Lapapọ Agbara ipadanu

125

W

TSTG

Ibi ipamọ otutu Ibiti

-55 si 150

TJ 

Ibiti o gbona Junction Nṣiṣẹ

-55 si 150

 

Aami

Paramita

Awọn ipo

Min.

Iru.

O pọju.

Ẹyọ

BVDSS 

Sisan-Orisun didenukole Foliteji VGS= 0V, ID= 250uA

100

---

---

V

  Aimi Sisan-Orisun On-Resistance VGS=10V,ID=10A.

---

8.5

10.0

RDS(ON)

VGS=4.5V,ID=10A.

---

9.5

12.0

VGS(th)

Foliteji Ala ẹnu-ọna VGS=VDS, ID= 250uA

1.0

---

2.5

V

IDSS

Sisan-Orisun jijo Lọwọlọwọ VDS= 80V, VGS= 0V, TJ=25℃

---

---

1

uA

IGSS

Ẹnu-Orisun jijo Lọwọlọwọ VGS= 20V, VDS= 0V

---

---

± 100

nA

Qg 

Lapapọ idiyele ẹnu-ọna (10V) VDS= 50V, VGS= 10V, ID= 25A

---

49.9

---

nC

Qgs 

Ẹnu-Orisun idiyele

---

6.5

---

Qgd 

Ẹnubodè-Sisan agbara

---

12.4

---

Td(lori)

Tan-On Idaduro Time VDD= 50V, VGS= 10V,RG= 2.2Ω, ID= 25A

---

20.6

---

ns

Tr 

Aago dide

---

5

---

Td (pa)

Pa Aago Idaduro

---

51.8

---

Tf 

Igba Irẹdanu Ewe

---

9

---

Ciss 

Agbara titẹ sii VDS= 50V, VGS=0V, f=1MHz

---

2604

---

pF

Kosi

O wu Agbara

---

362

---

Crss 

Yiyipada Gbigbe Capacitance

---

6.5

---

IS 

Tesiwaju Orisun Lọwọlọwọ VG=VD= 0V , Ipa Lọwọlọwọ

---

---

60

A

ISP

Pulsed Orisun Lọwọlọwọ

---

---

210

A

VSD

Diode Forward Foliteji VGS= 0V, IS= 12A, TJ=25℃

---

---

1.3

V

trr 

Yipada Gbigba Time IF=12A,dI/dt=100A/µs,TJ=25℃

---

60.4

---

nS

Qrr 

Yipada Gbigba agbara

---

106.1

---

nC


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