WSD60N12GDN56 N-ikanni 120V 70A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET ọja Akopọ
Foliteji ti WSD60N12GDN56 MOSFET jẹ 120V, lọwọlọwọ jẹ 70A, resistance jẹ 10mΩ, ikanni jẹ N-ikanni, ati package jẹ DFN5X6-8.
WINSOK MOSFET awọn agbegbe ohun elo
Ohun elo iṣoogun MOSFET, drones MOSFET, awọn ipese agbara PD MOSFET, awọn ipese agbara LED MOSFET, ohun elo ile-iṣẹ MOSFET.
Awọn aaye ohun elo MOSFETWINSOK MOSFET ni ibamu si awọn nọmba ohun elo ami iyasọtọ miiran
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.POTENS Semikondokito MOSFET PDC974X.
MOSFET paramita
| Aami | Paramita | Rating | Awọn ẹya |
| VDS | Sisan-Orisun Foliteji | 120 | V |
| VGS | Gate-Orisun Foliteji | ±20 | V |
| ID@TC=25℃ | Tesiwaju Sisan Lọwọlọwọ | 70 | A |
| IDP | Pulsed Sisan Lọwọlọwọ | 150 | A |
| EAS | Avalanche Energy, Nikan polusi | 53.8 | mJ |
| PD@TC=25℃ | Lapapọ Agbara ipadanu | 140 | W |
| TSTG | Ibi ipamọ otutu Ibiti | -55 si 150 | ℃ |
| TJ | Ibiti o gbona Junction Nṣiṣẹ | -55 si 150 | ℃ |
| Aami | Paramita | Awọn ipo | Min. | Iru. | O pọju. | Ẹyọ |
| BVDSS | Sisan-Orisun didenukole Foliteji | VGS= 0V, ID= 250uA | 120 | --- | --- | V |
| Aimi Sisan-Orisun On-Resistance | VGS=10V,ID=10A. | --- | 10 | 15 | mΩ | |
| RDS(ON) | VGS=4.5V,ID=10A. | --- | 18 | 25 | mΩ | |
| VGS(th) | Foliteji Ala ẹnu-ọna | VGS=VDS, ID= 250uA | 1.2 | --- | 2.5 | V |
| IDSS | Sisan-Orisun jijo Lọwọlọwọ | VDS= 80V, VGS= 0V, TJ=25℃ | --- | --- | 1 | uA |
| IGSS | Ẹnu-Orisun jijo Lọwọlọwọ | VGS= 20V, VDS= 0V | --- | --- | ± 100 | nA |
| Qg | Lapapọ idiyele ẹnu-ọna (10V) | VDS= 50V, VGS= 10V, ID= 25A | --- | 33 | --- | nC |
| Qgs | Ẹnu-Orisun idiyele | --- | 5.6 | --- | ||
| Qgd | Ẹnubodè-Sisan agbara | --- | 7.2 | --- | ||
| Td(lori) | Tan-On Idaduro Time | VDD= 50V, VGS= 10V, RG= 2Ω, ID= 25A | --- | 22 | --- | ns |
| Tr | Aago dide | --- | 10 | --- | ||
| Td (pa) | Pa Aago Idaduro | --- | 85 | --- | ||
| Tf | Igba Irẹdanu Ewe | --- | 112 | --- | ||
| Ciss | Agbara titẹ sii | VDS= 50V, VGS=0V, f=1MHz | --- | 2640 | --- | pF |
| Kosi | O wu Agbara | --- | 330 | --- | ||
| Crss | Yiyipada Gbigbe Capacitance | --- | 11 | --- | ||
| IS | Tesiwaju Orisun Lọwọlọwọ | VG=VD= 0V , Ipa Lọwọlọwọ | --- | --- | 50 | A |
| ISP | Pulsed Orisun Lọwọlọwọ | --- | --- | 150 | A | |
| VSD | Diode Forward Foliteji | VGS= 0V, IS= 12A, TJ=25℃ | --- | --- | 1.3 | V |
| trr | Yipada Gbigba Time | IF=25A,dI/dt=100A/µs,TJ=25℃ | --- | 62 | --- | nS |
| Qrr | Yipada Gbigba agbara | --- | 135 | --- | nC |
