WSD75100DN56 N-ikanni 75V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET ọja Akopọ
Foliteji ti WSD75100DN56 MOSFET jẹ 75V, lọwọlọwọ jẹ 100A, resistance jẹ 5.3mΩ, ikanni jẹ N-ikanni, ati package jẹ DFN5X6-8.
WINSOK MOSFET awọn agbegbe ohun elo
E-siga MOSFET, gbigba agbara alailowaya MOSFET, drones MOSFET, itọju iṣoogun MOSFET, ṣaja ọkọ ayọkẹlẹ MOSFET, awọn olutona MOSFET, awọn ọja oni nọmba MOSFET, awọn ohun elo ile kekere MOSFET, ẹrọ itanna onibara MOSFET.
WINSOK MOSFET ni ibamu si awọn nọmba ohun elo iyasọtọ miiran
AOS MOSFET AON6276,AON6278,AON628,AON6282,AON6448.Onsemi,FAIRCHILD MOSFET NVMFS6H824N.STMicroelectronics MOSFET STL1N8F7.INFINEON,IR MOSFET BSC42NE7NS3GET7.NSFET7 X.
MOSFET paramita
| Aami | Paramita | Rating | Awọn ẹya |
| VDS | Sisan-Orisun Foliteji | 75 | V |
| VGS | Ẹnubodè-Source Foliteji | ±25 | V |
| TJ | O pọju Junction otutu | 150 | °C |
| ID | Ibi ipamọ otutu Ibiti | -55 si 150 | °C |
| IS | Diode Tesiwaju Iwaju Lọwọlọwọ,TC=25°C | 50 | A |
| ID | Imugbẹ lọwọlọwọ lọwọlọwọ, VGS= 10V,TC=25°C | 100 | A |
| Imugbẹ lọwọlọwọ lọwọlọwọ, VGS= 10V,TC=100°C | 73 | A | |
| IDM | Imugbẹ Pulsed Lọwọlọwọ, TC=25°C | 400 | A |
| PD | Ipilẹ agbara ti o pọju,TC=25°C | 155 | W |
| Ipilẹ agbara ti o pọju,TC=100°C | 62 | W | |
| RθJA | Atako Gbona-Ipapọ si Ibaramu ,t =10s ̀ | 20 | °C |
| Atako Gbona-Ipapọ si Ibaramu, Ipinle Iduroṣinṣin | 60 | °C | |
| RqJC | Gbona Resistance-Junction to Case | 0.8 | °C |
| IAS | Avalanche Lọwọlọwọ, Ẹyọ Kanṣoṣo, L = 0.5mH | 30 | A |
| EAS | Agbara Avalanche, Pulu ẹyọkan, L = 0.5mH | 225 | mJ |
| Aami | Paramita | Awọn ipo | Min. | Iru. | O pọju. | Ẹyọ |
| BVDSS | Sisan-Orisun didenukole Foliteji | VGS= 0V, ID= 250uA | 75 | --- | --- | V |
| △BVDSS/△TJ | BVDSSOlusodipupo iwọn otutu | Itọkasi si 25℃, ID= 1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Aimi Sisan-Orisun On-Resistance2 | VGS=10V, ID= 25A | --- | 5.3 | 6.4 | mΩ |
| VGS(th) | Foliteji Ala ẹnu-ọna | VGS=VDS, ID= 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Olusodipupo iwọn otutu | --- | -6.94 | --- | mV/℃ | |
| IDSS | Sisan-Orisun jijo Lọwọlọwọ | VDS= 48V, VGS= 0V, TJ= 25℃ | --- | --- | 2 | uA |
| VDS= 48V, VGS= 0V, TJ= 55℃ | --- | --- | 10 | |||
| IGSS | Ẹnu-Orisun jijo Lọwọlọwọ | VGS=±20V, VDS= 0V | --- | --- | ±100 | nA |
| gfs | Siwaju Transconductance | VDS= 5V, ID= 20A | --- | 50 | --- | S |
| Rg | Resistance ẹnu-bode | VDS= 0V, VGS= 0V, f=1MHz | --- | 1.0 | 2 | Ω |
| Qg | Lapapọ idiyele ẹnu-ọna (10V) | VDS= 20V, VGS= 10V, ID= 40A | --- | 65 | 85 | nC |
| Qgs | Ẹnu-Orisun idiyele | --- | 20 | --- | ||
| Qgd | Ẹnubodè-Sisan agbara | --- | 17 | --- | ||
| Td(lori) | Tan-On Idaduro Time | VDD= 30V, VGEN= 10V, RG=1Ω, ID=1A ,RL=15Ω. | --- | 27 | 49 | ns |
| Tr | Aago dide | --- | 14 | 26 | ||
| Td (pa) | Pa Aago Idaduro | --- | 60 | 108 | ||
| Tf | Igba Irẹdanu Ewe | --- | 37 | 67 | ||
| Ciss | Agbara titẹ sii | VDS= 20V, VGS= 0V, f=1MHz | 3450 | 3500 | 4550 | pF |
| Kosi | O wu Agbara | 245 | 395 | 652 | ||
| Crss | Yiyipada Gbigbe Capacitance | 100 | 195 | 250 |
