WSD75N12GDN56 N-ikanni 120V 75A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET ọja Akopọ
Foliteji ti WSD75N12GDN56 MOSFET jẹ 120V, lọwọlọwọ jẹ 75A, resistance jẹ 6mΩ, ikanni jẹ N-ikanni, ati package jẹ DFN5X6-8.
WINSOK MOSFET awọn agbegbe ohun elo
Ohun elo iṣoogun MOSFET, drones MOSFET, awọn ipese agbara PD MOSFET, awọn ipese agbara LED MOSFET, ohun elo ile-iṣẹ MOSFET.
Awọn aaye ohun elo MOSFETWINSOK MOSFET ni ibamu si awọn nọmba ohun elo ami iyasọtọ miiran
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.
MOSFET paramita
| Aami | Paramita | Rating | Awọn ẹya |
| VDSS | Sisan-to-Orisun Foliteji | 120 | V |
| VGS | Ẹnu-si-Orisun Foliteji | ±20 | V |
| ID | 1 Imudanu Tẹsiwaju lọwọlọwọ (Tc=25℃) | 75 | A |
| ID | 1 Imudanu Tẹsiwaju lọwọlọwọ (Tc=70℃) | 70 | A |
| IDM | Pulsed Sisan Lọwọlọwọ | 320 | A |
| IAR | Nikan polusi owusuwusu lọwọlọwọ | 40 | A |
| EASa | Nikan polusi owusuwusu agbara | 240 | mJ |
| PD | Imukuro agbara | 125 | W |
| TJ, Tstg | Ipinnu iṣẹ ati Ibi iwọn otutu Ibi ipamọ | -55 si 150 | ℃ |
| TL | O pọju otutu fun Soldering | 260 | ℃ |
| RθJC | Gbona Resistance, Junction-to-Case | 1.0 | ℃/W |
| RÉJA | Gbona Resistance, Junction-to-Ambient | 50 | ℃/W |
| Aami | Paramita | Awọn ipo Idanwo | Min. | Iru. | O pọju. | Awọn ẹya |
| VDSS | Sisan si orisun didenukole Foliteji | VGS=0V, ID=250µA | 120 | -- | -- | V |
| IDSS | Sisan si Orisun jijo Lọwọlọwọ | VDS = 120V, VGS = 0V | -- | -- | 1 | µA |
| IGSS(F) | Ẹnu-ọna si Orisun jijo iwaju | VGS =+20V | -- | -- | 100 | nA |
| IGSS(R) | Ẹnubodè Orisun Yiyọ Yiyọ | VGS = -20V | -- | -- | -100 | nA |
| VGS(TH) | Foliteji Ala ẹnu-ọna | VDS=VGS, ID = 250µA | 2.5 | 3.0 | 3.5 | V |
| RDS(ON)1 | Sisan-si-Orisun On-Resistance | VGS=10V, ID=20A | -- | 6.0 | 6.8 | mΩ |
| gFS | Siwaju Transconductance | VDS=5V, ID=50A | 130 | -- | S | |
| Ciss | Agbara titẹ sii | VGS = 0V VDS = 50V f =1.0MHz | -- | 4282 | -- | pF |
| Kosi | O wu Agbara | -- | 429 | -- | pF | |
| Krss | Yiyipada Gbigbe Capacitance | -- | 17 | -- | pF | |
| Rg | Idaabobo ẹnu-ọna | -- | 2.5 | -- | Ω | |
| td(ON) | Tan-an Idaduro Time | ID = 20A VDS = 50V VGS = 10V RG = 5Ω | -- | 20 | -- | ns |
| tr | Aago dide | -- | 11 | -- | ns | |
| td(PA) | Pa Aago Idaduro | -- | 55 | -- | ns | |
| tf | Igba Irẹdanu Ewe | -- | 28 | -- | ns | |
| Qg | Total Gate agbara | VGS = 0 ~ 10V VDS = 50VID = 20A | -- | 61.4 | -- | nC |
| Qgs | Gate Orisun idiyele | -- | 17.4 | -- | nC | |
| Qgd | Ẹnubodè Sisan agbara | -- | 14.1 | -- | nC | |
| IS | Diode Siwaju Lọwọlọwọ | TC = 25 °C | -- | -- | 100 | A |
| ISM | Diode Pulse Lọwọlọwọ | -- | -- | 320 | A | |
| VSD | Diode Forward Foliteji | IS=6.0A, VGS=0V | -- | -- | 1.2 | V |
| trr | Yipada Gbigba akoko | IS=20A, VDD=50V dIF/dt=100A/μs | -- | 100 | -- | ns |
| Qrr | Yipada Gbigba agbara | -- | 250 | -- | nC |
