WSD80100DN56 N-ikanni 80V 100A DFN5X6-8 WINSOK MOSFET

awọn ọja

WSD80100DN56 N-ikanni 80V 100A DFN5X6-8 WINSOK MOSFET

kukuru apejuwe:

Nọmba Apa:WSD80100DN56

BVDSS:80V

ID:100A

RDSON:6.1mΩ

ikanni:N-ikanni

Apo:DFN5X6-8


Alaye ọja

Ohun elo

ọja Tags

WINSOK MOSFET ọja Akopọ

Foliteji ti WSD80100DN56 MOSFET jẹ 80V, lọwọlọwọ jẹ 100A, resistance jẹ 6.1mΩ, ikanni jẹ N-ikanni, ati package jẹ DFN5X6-8.

WINSOK MOSFET awọn agbegbe ohun elo

Drones MOSFET, Motors MOSFET, ẹrọ itanna MOSFET, awọn ohun elo pataki MOSFET.

WINSOK MOSFET ni ibamu si awọn nọmba ohun elo iyasọtọ miiran

AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL1N8F7.POTENS Semikondokito MOSFET PDC7966X.

MOSFET paramita

Aami

Paramita

Rating

Awọn ẹya

VDS

Sisan-Orisun Foliteji

80

V

VGS

Ẹnubodè-Source Foliteji

±20

V

TJ

O pọju Junction otutu

150

°C

ID

Ibi ipamọ otutu Ibiti

-55 si 150

°C

ID

Imugbẹ lọwọlọwọ lọwọlọwọ, VGS=10V,TC=25°C

100

A

Imugbẹ lọwọlọwọ lọwọlọwọ, VGS=10V,TC=100°C

80

A

IDM

Imugbẹ Pulsed Lọwọlọwọ, TC=25°C

380

A

PD

Ipilẹ agbara ti o pọju,TC=25°C

200

W

RqJC

Gbona Resistance-Junction to Case

0.8

°C

EAS

Agbara Avalanche, Pulu ẹyọkan, L = 0.5mH

800

mJ

 

Aami

Paramita

Awọn ipo

Min.

Iru.

O pọju.

Ẹyọ

BVDSS

Sisan-Orisun didenukole Foliteji VGS= 0V, ID= 250uA

80

---

---

V

BVDSS/△TJ

BVDSSOlusodipupo iwọn otutu Itọkasi si 25, ID= 1mA

---

0.043

---

V/

RDS(ON)

Aimi Sisan-Orisun On-Resistance2 VGS=10V, ID= 40A

---

6.1

8.5

mΩ

VGS(th)

Foliteji Ala ẹnu-ọna VGS=VDS, ID= 250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Olusodipupo iwọn otutu

---

-6.94

---

mV/

IDSS

Sisan-Orisun jijo Lọwọlọwọ VDS= 48V, VGS= 0V, TJ= 25

---

---

2

uA

VDS= 48V, VGS= 0V, TJ= 55

---

---

10

IGSS

Ẹnu-Orisun jijo Lọwọlọwọ VGS=±20V, VDS= 0V

---

---

±100

nA

gfs

Siwaju Transconductance VDS= 5V, ID= 20A

80

---

---

S

Qg

Lapapọ idiyele ẹnu-ọna (10V) VDS= 30V, VGS= 10V, ID= 30A

---

125

---

nC

Qgs

Ẹnu-Orisun idiyele

---

24

---

Qgd

Ẹnubodè-Sisan agbara

---

30

---

Td(lori)

Tan-On Idaduro Time VDD= 30V, VGS= 10V,

RG= 2.5Ω, ID=2A ,RL=15Ω.

---

20

---

ns

Tr

Aago dide

---

19

---

Td (pa)

Pa Aago Idaduro

---

70

---

Tf

Igba Irẹdanu Ewe

---

30

---

Ciss

Agbara titẹ sii VDS= 25V, VGS=0V, f=1MHz

---

4900

---

pF

Kosi

O wu Agbara

---

410

---

Crss

Yiyipada Gbigbe Capacitance

---

315

---


  • Ti tẹlẹ:
  • Itele:

  • Kọ ifiranṣẹ rẹ nibi ki o si fi si wa