WSF4022 Meji N-ikanni 40V 20A TO-252-4L WINSOK MOSFET
Gbogbogbo Apejuwe
WSF4022 jẹ trench iṣẹ ṣiṣe ti o ga julọ Dual N-Ch MOSFET pẹlu iwuwo sẹẹli ti o ga pupọ, eyiti o pese RDSON ti o dara julọ ati idiyele ẹnu-ọna fun pupọ julọ awọn ohun elo oluyipada ẹtu amuṣiṣẹpọ.WSF4022 pade RoHS ati ibeere Ọja alawọ ewe 100% EAS ni iṣeduro pẹlu iṣẹ kikun igbẹkẹle fọwọsi.
Awọn ẹya ara ẹrọ
Fun Fan Pre-driver H-Bridge,Motor Iṣakoso, Atunse Amuṣiṣẹpọ,E-siga, Ailokun gbigba agbara, Motors, pajawiri agbara ipese, drones, egbogi itoju, ọkọ ayọkẹlẹ ṣaja, olutona, oni awọn ọja, kekere ohun elo ile, olumulo Electronics.
Awọn ohun elo
Fun Fan Pre-driver H-Bridge,Motor Iṣakoso, Atunse Amuṣiṣẹpọ,E-siga, Ailokun gbigba agbara, Motors, pajawiri agbara ipese, drones, egbogi itoju, ọkọ ayọkẹlẹ ṣaja, olutona, oni awọn ọja, kekere ohun elo ile, olumulo Electronics.
nọmba ohun elo ti o baamu
AOS
Awọn paramita pataki
| Aami | Paramita | Rating | Awọn ẹya | |
| VDS | Sisan-Orisun Foliteji | 40 | V | |
| VGS | Gate-Orisun Foliteji | ±20 | V | |
| ID | Sisan lọwọlọwọ (Tẹsiwaju) * AC | TC=25°C | 20* | A |
| ID | Sisan lọwọlọwọ (Tẹsiwaju) * AC | TC=100°C | 20* | A |
| ID | Sisan lọwọlọwọ (Tẹsiwaju) * AC | TA=25°C | 12.2 | A |
| ID | Sisan lọwọlọwọ (Tẹsiwaju) * AC | TA=70°C | 10.2 | A |
| IDMa | Pulsed Sisan Lọwọlọwọ | TC=25°C | 80* | A |
| EASb | Nikan Polusi owusuwusu Energy | L=0.5mH | 25 | mJ |
| IAS b | Avalanche Lọwọlọwọ | L=0.5mH | 17.8 | A |
| PD | Ipilẹ agbara ti o pọju | TC=25°C | 39.4 | W |
| PD | Ipilẹ agbara ti o pọju | TC=100°C | 19.7 | W |
| PD | Imukuro agbara | TA=25°C | 6.4 | W |
| PD | Imukuro agbara | TA=70°C | 4.2 | W |
| TJ | Ibiti o gbona Junction Nṣiṣẹ | 175 | ℃ | |
| TSTG | Awọn iwọn otutu ti nṣiṣẹ / Ibi ipamọ otutu | -55-175 | ℃ | |
| RÍJA b | Gbona Resistance Junction-Ambient | Ipinle imurasilẹ c | 60 | ℃/W |
| RθJC | Gbona Resistance Junction to Case | 3.8 | ℃/W |
| Aami | Paramita | Awọn ipo | Min. | Iru. | O pọju. | Ẹyọ |
| Aimi | ||||||
| V(BR) DSS | Sisan-Orisun didenukole Foliteji | VGS = 0V, ID = 250μA | 40 | V | ||
| IDSS | Zero Gate Foliteji Sisan Lọwọlọwọ | VDS = 32V, VGS = 0V | 1 | µA | ||
| IDSS | Zero Gate Foliteji Sisan Lọwọlọwọ | VDS = 32V, VGS = 0V, TJ=85°C | 30 | µA | ||
| IGSS | Gate jijo Lọwọlọwọ | VGS = ± 20V, VDS = 0V | ± 100 | nA | ||
| VGS(th) | Foliteji Ala ẹnu-ọna | VGS = VDS, ID = 250µA | 1.1 | 1.6 | 2.5 | V |
| RDS(lori) d | Sisan-Orisun On-ipinle Resistance | VGS = 10V, ID = 10A | 16 | 21 | mΩ | |
| VGS = 4.5V, ID = 5A | 18 | 25 | mΩ | |||
| Ẹnubodè Chargee | ||||||
| Qg | Total Gate agbara | VDS=20V,VGS=4.5V, ID=10A | 7.5 | nC | ||
| Qgs | Ẹnu-Orisun idiyele | 3.24 | nC | |||
| Qgd | Ẹnubodè-Sisan agbara | 2.75 | nC | |||
| Yiyi | ||||||
| Ciss | Agbara titẹ sii | VGS = 0V, VDS = 20V, f = 1MHz | 815 | pF | ||
| Kosi | O wu Agbara | 95 | pF | |||
| Krss | Yiyipada Gbigbe Capacitance | 60 | pF | |||
| td (lori) | Tan-an Idaduro Time | VDD=20V, VGEN=10V, IDS=1A,RG=6Ω,RL=20Ω. | 7.8 | ns | ||
| tr | Tan-an Rise Time | 6.9 | ns | |||
| td (pa) | Pa Aago Idaduro | 22.4 | ns | |||
| tf | Pa Fall Time | 4.8 | ns | |||
| Diode | ||||||
| VSDd | Diode Forward Foliteji | ISD=1A, VGS=0V | 0.75 | 1.1 | V | |
| trr | Agbara titẹ sii | IDS=10A, dlSD/dt=100A/µs | 13 | ns | ||
| Qrr | O wu Agbara | 8.7 | nC | |||
