WSF6012 N&P-ikanni 60V/-60V 20A/-15A TO-252-4L WINSOK MOSFET

kukuru apejuwe:

Nọmba awoṣe:WSF6012

BVDSS:60V/-60V

RDSON:28mΩ/75mΩ

ID:20A/-15A

Ikanni:N&P-ikanni

Apo:TO-252-4L

Ọja Ooru:WSF6012 MOSFET ni iwọn foliteji ti 60V ati -60V, o le mu awọn ṣiṣan lọ si 20A ati -15A, ni resistance ti 28mΩ ati 75mΩ, awọn ẹya N&P-ikanni mejeeji, ati pe o ti ṣajọ ni TO-252-4L.

Awọn ohun elo:Awọn siga e-siga, awọn ṣaja alailowaya, awọn mọto, awọn afẹyinti agbara, awọn drones, ilera, ṣaja ọkọ ayọkẹlẹ, awọn olutona, ẹrọ itanna, awọn ohun elo, ati awọn ọja olumulo.

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Gbogbogbo Apejuwe

WSF6012 MOSFET jẹ ẹrọ ti o ga julọ pẹlu apẹrẹ iwuwo sẹẹli giga.O pese RDSON ti o dara julọ ati idiyele ẹnu-ọna ti o dara fun ọpọlọpọ awọn ohun elo oluyipada ẹtu amuṣiṣẹpọ.Ni afikun, o pade RoHS ati awọn ibeere Ọja Alawọ ewe, ati pe o wa pẹlu iṣeduro 100% EAS fun iṣẹ ṣiṣe ni kikun ati igbẹkẹle.

Awọn ẹya ara ẹrọ

Imọ-ẹrọ Trench To ti ni ilọsiwaju pẹlu iwuwo Ẹnu giga, Super Low Gate Charge, Didara Ipa Ipa CdV/dt, 100% EAS Guarantee, ati Awọn aṣayan Ẹrọ Ọrẹ Ayika.

Awọn ohun elo

Oluyipada Buck Amuṣiṣẹpọ ti Igbohunsafẹfẹ giga, Nẹtiwọki DC-DC Eto Agbara, Yipada fifuye, Awọn siga E-siga, gbigba agbara alailowaya, awọn mọto, awọn ipese agbara pajawiri, drones, ilera, ṣaja ọkọ ayọkẹlẹ, awọn oludari, awọn ẹrọ oni-nọmba, awọn ohun elo ile kekere, ati ẹrọ itanna olumulo.

nọmba ohun elo ti o baamu

AOS AOD603A,

Awọn paramita pataki

Aami	Paramita	Rating		Awọn ẹya
Aami	Paramita	N-ikanni	P-ikanni	Awọn ẹya
VDS	Sisan-Orisun Foliteji	60	-60	V
VGS	Gate-Orisun Foliteji	±20	±20	V
ID@TC=25℃	Imugbẹ lọwọlọwọ lọwọlọwọ, VGS @ 10V1	20	-15	A
ID@TC=70℃	Imugbẹ lọwọlọwọ lọwọlọwọ, VGS @ 10V1	15	-10	A
IDM	Pulsed Sisan Current2	46	-36	A
EAS	Nikan Polusi owusuwusu Energy3	200	180	mJ
IAS	Avalanche Lọwọlọwọ	59	-50	A
PD@TC=25℃	Lapapọ Agbara ipadanu4	34.7	34.7	W
TSTG	Ibi ipamọ otutu Ibiti	-55 si 150	-55 si 150	℃
TJ	Ibiti o gbona Junction Nṣiṣẹ	-55 si 150	-55 si 150	℃

Aami	Paramita	Awọn ipo	Min.	Iru.	O pọju.	Ẹyọ
BVDSS	Sisan-Orisun didenukole Foliteji	VGS=0V, ID=250uA	60	---	---	V
△BVDSS/△TJ	BVDSS otutu olùsọdipúpọ	Itọkasi si 25℃, ID=1mA	---	0.063	---	V/℃
RDS(ON)	Aimi Sisan-Orisun On-Resistance2	VGS=10V, ID=8A	---	28	37	mΩ
RDS(ON)	Aimi Sisan-Orisun On-Resistance2	VGS=4.5V, ID=5A	---	37	45	mΩ
VGS(th)	Foliteji Ala ẹnu-ọna	VGS=VDS, ID =250uA	1	---	2.5	V
△VGS(th)	VGS(th) Olusodipupo iwọn otutu	VGS=VDS, ID =250uA	---	-5.24	---	mV/℃
IDSS	Sisan-Orisun jijo Lọwọlọwọ	VDS=48V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Sisan-Orisun jijo Lọwọlọwọ	VDS=48V, VGS=0V, TJ=55℃	---	---	5	uA
IGSS	Ẹnu-Orisun jijo Lọwọlọwọ	VGS=±20V, VDS=0V	---	---	± 100	nA
gfs	Siwaju Transconductance	VDS=5V, ID=8A	---	21	---	S
Rg	Resistance ẹnu-bode	VDS=0V, VGS=0V, f=1MHz	---	3.0	4.5	Ω
Qg	Lapapọ idiyele ẹnu-ọna (4.5V)	VDS=48V, VGS=4.5V, ID=8A	---	12.6	20	nC
Qgs	Ẹnu-Orisun idiyele		---	3.5	---
Qgd	Ẹnubodè-Sisan agbara		---	6.3	---
Td(lori)	Tan-On Idaduro Time	VDD=30V, VGS=4.5V, RG=3.3Ω, ID=1A	---	8	---	ns
Tr	Aago dide		---	14.2	---
Td (pa)	Pa Aago Idaduro		---	24.6	---
Tf	Igba Irẹdanu Ewe		---	4.6	---
Ciss	Agbara titẹ sii	VDS=15V, VGS=0V, f=1MHz	---	670	---	pF
Kosi	O wu Agbara		---	70	---
Krss	Yiyipada Gbigbe Capacitance		---	35	---