WSF6012 N&P-ikanni 60V/-60V 20A/-15A TO-252-4L WINSOK MOSFET

awọn ọja

WSF6012 N&P-ikanni 60V/-60V 20A/-15A TO-252-4L WINSOK MOSFET

kukuru apejuwe:


  • Nọmba awoṣe:WSF6012
  • BVDSS:60V/-60V
  • RDSON:28mΩ/75mΩ
  • ID:20A/-15A
  • Ikanni:N&P-ikanni
  • Apo:TO-252-4L
  • Ọja Ooru:WSF6012 MOSFET ni iwọn foliteji ti 60V ati -60V, o le mu awọn ṣiṣan to 20A ati -15A, ni resistance ti 28mΩ ati 75mΩ, awọn ẹya N&P-ikanni mejeeji, ati pe o ti ṣajọ ni TO-252-4L.
  • Awọn ohun elo:Awọn siga e-siga, awọn ṣaja alailowaya, awọn mọto, awọn afẹyinti agbara, awọn drones, ilera, ṣaja ọkọ ayọkẹlẹ, awọn olutona, awọn ẹrọ itanna, awọn ohun elo, ati awọn ọja olumulo.
  • Alaye ọja

    Ohun elo

    ọja Tags

    Gbogbogbo Apejuwe

    WSF6012 MOSFET jẹ ẹrọ ti o ga julọ pẹlu apẹrẹ iwuwo sẹẹli giga. O pese RDSON ti o dara julọ ati idiyele ẹnu-ọna ti o dara fun ọpọlọpọ awọn ohun elo oluyipada ẹtu amuṣiṣẹpọ. Ni afikun, o pade awọn ibeere RoHS ati Alawọ ewe, ati pe o wa pẹlu iṣeduro 100% EAS fun iṣẹ ṣiṣe ni kikun ati igbẹkẹle.

    Awọn ẹya ara ẹrọ

    Imọ-ẹrọ Trench To ti ni ilọsiwaju pẹlu iwuwo Ẹnu giga, Super Low Gate Charge, Didara Ipa Ipa CdV/dt, 100% EAS Guarantee, ati Awọn aṣayan Ẹrọ Ọrẹ Ayika.

    Awọn ohun elo

    Oluyipada Buck Amuṣiṣẹpọ ti Igbohunsafẹfẹ giga, Nẹtiwọọki DC-DC Eto Agbara, Yipada fifuye, Awọn siga E-siga, gbigba agbara alailowaya, awọn mọto, awọn ipese agbara pajawiri, drones, ilera, ṣaja ọkọ ayọkẹlẹ, awọn oludari, awọn ẹrọ oni-nọmba, awọn ohun elo ile kekere, ati ẹrọ itanna olumulo.

    nọmba ohun elo ti o baamu

    AOS AOD603A,

    Awọn paramita pataki

    Aami Paramita Rating Awọn ẹya
    N-ikanni P-ikanni
    VDS Sisan-Orisun Foliteji 60 -60 V
    VGS Gate-Orisun Foliteji ±20 ±20 V
    ID@TC=25℃ Imugbẹ lọwọlọwọ lọwọlọwọ, VGS @ 10V1 20 -15 A
    ID@TC=70℃ Imugbẹ lọwọlọwọ lọwọlọwọ, VGS @ 10V1 15 -10 A
    IDM Pulsed Sisan Current2 46 -36 A
    EAS Nikan Polusi owusuwusu Energy3 200 180 mJ
    IAS Avalanche Lọwọlọwọ 59 -50 A
    PD@TC=25℃ Lapapọ Agbara ipadanu4 34.7 34.7 W
    TSTG Ibi ipamọ otutu Ibiti -55 si 150 -55 si 150
    TJ Ibiti o gbona Junction Nṣiṣẹ -55 si 150 -55 si 150
    Aami Paramita Awọn ipo Min. Iru. O pọju. Ẹyọ
    BVDSS Sisan-Orisun didenukole Foliteji VGS=0V, ID=250uA 60 --- --- V
    △BVDSS/△TJ BVDSS otutu olùsọdipúpọ Itọkasi si 25℃, ID=1mA --- 0.063 --- V/℃
    RDS(ON) Aimi Sisan-Orisun On-Resistance2 VGS=10V, ID=8A --- 28 37
    VGS=4.5V, ID=5A --- 37 45
    VGS(th) Foliteji Ala ẹnu-ọna VGS=VDS, ID =250uA 1 --- 2.5 V
    △VGS(th) VGS(th) Olusodipupo iwọn otutu --- -5.24 --- mV/℃
    IDSS Sisan-Orisun jijo Lọwọlọwọ VDS=48V, VGS=0V, TJ=25℃ --- --- 1 uA
    VDS=48V, VGS=0V, TJ=55℃ --- --- 5
    IGSS Ẹnu-Orisun jijo Lọwọlọwọ VGS=±20V, VDS=0V --- --- ± 100 nA
    gfs Siwaju Transconductance VDS=5V, ID=8A --- 21 --- S
    Rg Resistance ẹnu-bode VDS=0V, VGS=0V, f=1MHz --- 3.0 4.5 Ω
    Qg Lapapọ idiyele ẹnu-ọna (4.5V) VDS=48V, VGS=4.5V, ID=8A --- 12.6 20 nC
    Qgs Ẹnu-Orisun idiyele --- 3.5 ---
    Qgd Ẹnubodè-Sisan agbara --- 6.3 ---
    Td(lori) Tan-On Idaduro Time VDD=30V, VGS=4.5V,

    RG=3.3Ω, ID=1A

    --- 8 --- ns
    Tr Aago dide --- 14.2 ---
    Td (pa) Pa Aago Idaduro --- 24.6 ---
    Tf Igba Irẹdanu Ewe --- 4.6 ---
    Ciss Agbara titẹ sii VDS=15V, VGS=0V, f=1MHz --- 670 --- pF
    Kosi O wu Agbara --- 70 ---
    Krss Yiyipada Gbigbe Capacitance --- 35 ---

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