WSM320N04G N-ikanni 40V 320A TOLL-8L WINSOK MOSFET

kukuru apejuwe:

Nọmba awoṣe:WSM320N04G

BVDSS:40V

RDSON:1.2mΩ

ID:320A

Ikanni:N-ikanni

Apo:TOLL-8L

Ọja Ooru:WSM320N04G MOSFET ni foliteji ti 40V, lọwọlọwọ ti 320A, resistance ti 1.2mΩ, ikanni N-ikanni kan, ati package TOLL-8L kan.

Awọn ohun elo:Awọn siga itanna, gbigba agbara alailowaya, drones, iṣoogun, gbigba agbara ọkọ ayọkẹlẹ, awọn olutona, awọn ọja oni-nọmba, awọn ohun elo ile kekere, ẹrọ itanna olumulo.

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Gbogbogbo Apejuwe

WSM320N04G jẹ MOSFET iṣẹ ṣiṣe giga ti o nlo apẹrẹ trench ati pe o ni iwuwo sẹẹli ti o ga pupọ.O ni RDSON ti o dara julọ ati idiyele ẹnu-ọna ati pe o dara fun ọpọlọpọ awọn ohun elo oluyipada ẹtu amuṣiṣẹpọ.WSM320N04G pade awọn ibeere RoHS ati Green ọja ati pe o ni iṣeduro lati ni 100% EAS ati igbẹkẹle iṣẹ kikun.

Awọn ẹya ara ẹrọ

Imọ-ẹrọ Trench iwuwo sẹẹli giga ti ilọsiwaju, lakoko ti o nfihan idiyele ẹnu-ọna kekere kan fun iṣẹ ṣiṣe to dara julọ.Ni afikun, o ṣogo idinku ipa ipa CdV/dt ti o dara julọ, 100% Ẹri EAS ati aṣayan ore-aye kan.

Awọn ohun elo

Oluyipada Buck Amuṣiṣẹpọ Igbohunsafẹfẹ giga-ti-Fifuye, Nẹtiwọki DC-DC Power System, Ohun elo Irinṣẹ Agbara, Awọn siga Itanna, gbigba agbara alailowaya, drones, iṣoogun, gbigba agbara ọkọ ayọkẹlẹ, awọn olutona, awọn ọja oni-nọmba, awọn ohun elo ile kekere, ati ẹrọ itanna olumulo.

Awọn paramita pataki

Aami	Paramita	Rating	Awọn ẹya
VDS	Sisan-Orisun Foliteji	40	V
VGS	Gate-Orisun Foliteji	±20	V
ID@TC=25℃	Imugbẹ lọwọlọwọ lọwọlọwọ, VGS @ 10V1,7	320	A
ID@TC=100℃	Imugbẹ lọwọlọwọ lọwọlọwọ, VGS @ 10V1,7	192	A
IDM	Pulsed Sisan Current2	900	A
EAS	Nikan Polusi owusuwusu Energy3	980	mJ
IAS	Avalanche Lọwọlọwọ	70	A
PD@TC=25℃	Lapapọ Agbara ipadanu4	250	W
TSTG	Ibi ipamọ otutu Ibiti	-55 si 175	℃
TJ	Ibiti o gbona Junction Nṣiṣẹ	-55 si 175	℃

Aami	Paramita	Awọn ipo	Min.	Iru.	O pọju.	Ẹyọ
BVDSS	Sisan-Orisun didenukole Foliteji	VGS=0V, ID=250uA	40	---	---	V
△BVDSS/△TJ	BVDSS otutu olùsọdipúpọ	Itọkasi si 25 ℃, ID=1mA	---	0.050	---	V/℃
RDS(ON)	Aimi Sisan-Orisun On-Resistance2	VGS=10V, ID=25A	---	1.2	1.5	mΩ
RDS(ON)	Aimi Sisan-Orisun On-Resistance2	VGS=4.5V, ID=20A	---	1.7	2.5	mΩ
VGS(th)	Foliteji Ala ẹnu-ọna	VGS=VDS, ID =250uA	1.2	1.7	2.6	V
△VGS(th)	VGS(th) Olusodipupo iwọn otutu	VGS=VDS, ID =250uA	---	-6.94	---	mV/℃
IDSS	Sisan-Orisun jijo Lọwọlọwọ	VDS=40V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Sisan-Orisun jijo Lọwọlọwọ	VDS=40V, VGS=0V, TJ=55℃	---	---	10	uA
IGSS	Ẹnu-Orisun jijo Lọwọlọwọ	VGS=±20V, VDS=0V	---	---	± 100	nA
gfs	Siwaju Transconductance	VDS=5V, ID=50A	---	160	---	S
Rg	Resistance ẹnu-bode	VDS=0V, VGS=0V, f=1MHz	---	1.0	---	Ω
Qg	Lapapọ idiyele ẹnu-ọna (10V)	VDS=20V, VGS=10V, ID=25A	---	130	---	nC
Qgs	Ẹnu-Orisun idiyele		---	43	---
Qgd	Ẹnubodè-Sisan agbara		---	83	---
Td(lori)	Tan-On Idaduro Time	VDD=20V , VGEN=4.5V , RG=2.7Ω, ID=1A .	---	30	---	ns
Tr	Aago dide		---	115	---
Td (pa)	Pa Aago Idaduro		---	95	---
Tf	Igba Irẹdanu Ewe		---	80	---
Ciss	Agbara titẹ sii	VDS=20V, VGS=0V, f=1MHz	---	8100	---	pF
Kosi	O wu Agbara		---	1200	---
Krss	Yiyipada Gbigbe Capacitance		---	800	---