WSM340N10G N-ikanni 100V 340A TOLL-8L WINSOK MOSFET

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WSM340N10G N-ikanni 100V 340A TOLL-8L WINSOK MOSFET

kukuru apejuwe:


  • Nọmba awoṣe:WSM340N10G
  • BVDSS:100V
  • RDSON:1.6mΩ
  • ID:340A
  • Ikanni:N-ikanni
  • Apo:TOLL-8L
  • Ọja Ooru:Foliteji ti WSM340N10G MOSFET jẹ 100V, lọwọlọwọ jẹ 340A, resistance jẹ 1.6mΩ, ikanni jẹ N-ikanni, ati package jẹ TOLL-8L.
  • Awọn ohun elo:Awọn ohun elo iṣoogun, awọn drones, awọn ipese agbara PD, awọn ipese agbara LED, ohun elo ile-iṣẹ, ati bẹbẹ lọ.
  • Alaye ọja

    Ohun elo

    ọja Tags

    Gbogbogbo Apejuwe

    WSM340N10G jẹ idọti iṣẹ ṣiṣe ti o ga julọ N-Ch MOSFET pẹlu iwuwo sẹẹli ti o ga pupọ, eyiti o pese RDSON ti o dara julọ ati idiyele ẹnu-ọna fun pupọ julọ awọn ohun elo oluyipada ẹtu amuṣiṣẹpọ.WSM340N10G pade ibeere RoHS ati Ọja Alawọ ewe, 100% EAS ṣe iṣeduro pẹlu igbẹkẹle iṣẹ kikun ti a fọwọsi.

    Awọn ẹya ara ẹrọ

    Ilọsiwaju giga iwuwo sẹẹli Trench ọna ẹrọ, Super Low Gate Charge, Didara ipa ipa CdV/dt, 100% EAS Ẹri, Ẹrọ alawọ ewe Wa.

    Awọn ohun elo

    Atunṣe amuṣiṣẹpọ, Ayipada DC / DC, Yipada fifuye, Ohun elo iṣoogun, awọn drones, awọn ipese agbara PD, awọn ipese agbara LED, ohun elo ile-iṣẹ, bbl

    Awọn paramita pataki

    Idi ti o pọju-wonsi

    Aami Paramita Rating Awọn ẹya
    VDS Sisan-Orisun Foliteji 100 V
    VGS Gate-Orisun Foliteji ±20 V
    ID@TC=25℃ Imugbẹ lọwọlọwọ lọwọlọwọ, VGS @ 10V 340 A
    ID@TC=100℃ Imugbẹ lọwọlọwọ lọwọlọwọ, VGS @ 10V 230 A
    IDM Pulsed Drain Lọwọlọwọ..TC=25°C 1150 A
    EAS Agbara Avalanche, Pulu ẹyọkan, L = 0.5mH 1800 mJ
    IAS Avalanche Lọwọlọwọ, Ẹyọ Kanṣoṣo, L = 0.5mH 120 A
    PD@TC=25℃ Lapapọ Agbara ipadanu 375 W
    PD@TC=100℃ Lapapọ Agbara ipadanu 187 W
    TSTG Ibi ipamọ otutu Ibiti -55 si 175
    TJ Ibiti o gbona Junction Nṣiṣẹ 175

    Awọn abuda Itanna (TJ=25℃, ayafi bibẹẹkọ ṣe akiyesi)

    Aami Paramita Awọn ipo Min. Iru. O pọju. Ẹyọ
    BVDSS Sisan-Orisun didenukole Foliteji VGS=0V, ID=250uA 100 --- --- V
    △BVDSS/△TJ BVDSS otutu olùsọdipúpọ Itọkasi si 25 ℃, ID=1mA --- 0.096 --- V/℃
    RDS(ON) Aimi Sisan-Orisun On-Resistance VGS=10V,ID=50A --- 1.6 2.3
    VGS(th) Foliteji Ala ẹnu-ọna VGS=VDS, ID =250uA 2.0 3.0 4.0 V
    △VGS(th) VGS(th) Olusodipupo iwọn otutu --- -5.5 --- mV/℃
    IDSS Sisan-Orisun jijo Lọwọlọwọ VDS=85V, VGS=0V, TJ=25℃ --- --- 1 uA
    VDS=85V, VGS=0V, TJ=55℃ --- --- 10
    IGSS Ẹnu-Orisun jijo Lọwọlọwọ VGS=±25V, VDS=0V --- --- ± 100 nA
    Rg Resistance ẹnu-bode VDS=0V, VGS=0V, f=1MHz --- 1.0 --- Ω
    Qg Lapapọ idiyele ẹnu-ọna (10V) VDS=50V, VGS=10V, ID=50A --- 260 --- nC
    Qgs Ẹnu-Orisun idiyele --- 80 ---
    Qgd Ẹnubodè-Sisan agbara --- 60 ---
    Td(lori) Tan-On Idaduro Time VDD=50V, VGS=10V,RG=1Ω,RL=1Ω,IDS=1A. --- 88 --- ns
    Tr Aago dide --- 50 ---
    Td (pa) Pa Aago Idaduro --- 228 ---
    Tf Igba Irẹdanu Ewe --- 322 ---
    Ciss Agbara titẹ sii VDS=40V, VGS=0V, f=1MHz --- 13900 --- pF
    Kosi O wu Agbara --- 6160 ---
    Krss Yiyipada Gbigbe Capacitance --- 220 ---

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