WSM340N10G N-ikanni 100V 340A TOLL-8L WINSOK MOSFET

kukuru apejuwe:

Nọmba awoṣe:WSM340N10G

BVDSS:100V

RDSON:1.6mΩ

ID:340A

Ikanni:N-ikanni

Apo:TOLL-8L

Ọja Ooru:Foliteji ti WSM340N10G MOSFET jẹ 100V, lọwọlọwọ jẹ 340A, resistance jẹ 1.6mΩ, ikanni jẹ N-ikanni, ati package jẹ TOLL-8L.

Awọn ohun elo:Awọn ohun elo iṣoogun, awọn drones, awọn ipese agbara PD, awọn ipese agbara LED, ohun elo ile-iṣẹ, ati bẹbẹ lọ.

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Gbogbogbo Apejuwe

WSM340N10G jẹ koto iṣẹ ṣiṣe ti o ga julọ N-Ch MOSFET pẹlu iwuwo sẹẹli ti o ga pupọ, eyiti o pese RDSON ti o dara julọ ati idiyele ẹnu-ọna fun pupọ julọ awọn ohun elo oluyipada ẹtu amuṣiṣẹpọ. WSM340N10G pade ibeere RoHS ati Ọja Alawọ ewe, 100% EAS ṣe iṣeduro pẹlu igbẹkẹle iṣẹ kikun ti a fọwọsi.

Awọn ẹya ara ẹrọ

Ilọsiwaju giga iwuwo sẹẹli Trench ọna ẹrọ, Super Low Gate Charge, Didara ipa ipa CdV/dt, 100% EAS Ẹri, Ẹrọ alawọ ewe Wa.

Awọn ohun elo

Atunṣe amuṣiṣẹpọ, Ayipada DC / DC, Yipada fifuye, Ohun elo iṣoogun, awọn drones, awọn ipese agbara PD, awọn ipese agbara LED, ohun elo ile-iṣẹ, bbl

Awọn paramita pataki

Idi ti o pọju-wonsi

Aami	Paramita	Rating	Awọn ẹya
VDS	Sisan-Orisun Foliteji	100	V
VGS	Gate-Orisun Foliteji	±20	V
ID@TC=25℃	Imugbẹ lọwọlọwọ lọwọlọwọ, VGS @ 10V	340	A
ID@TC=100℃	Imugbẹ lọwọlọwọ lọwọlọwọ, VGS @ 10V	230	A
IDM	Pulsed Drain Lọwọlọwọ..TC=25°C	1150	A
EAS	Agbara Avalanche, Pulu ẹyọkan, L = 0.5mH	1800	mJ
IAS	Avalanche Lọwọlọwọ, Ẹyọ Kanṣoṣo, L = 0.5mH	120	A
PD@TC=25℃	Lapapọ Agbara ipadanu	375	W
PD@TC=100℃	Lapapọ Agbara ipadanu	187	W
TSTG	Ibi ipamọ otutu Ibiti	-55 si 175	℃
TJ	Ibiti o gbona Junction Nṣiṣẹ	175	℃

Awọn abuda Itanna (TJ=25℃, ayafi bibẹẹkọ ṣe akiyesi)

Aami	Paramita	Awọn ipo	Min.	Iru.	O pọju.	Ẹyọ
BVDSS	Sisan-Orisun didenukole Foliteji	VGS=0V, ID=250uA	100	---	---	V
△BVDSS/△TJ	BVDSS otutu olùsọdipúpọ	Itọkasi si 25℃, ID=1mA	---	0.096	---	V/℃
RDS(ON)	Aimi Sisan-Orisun On-Resistance	VGS=10V,ID=50A	---	1.6	2.3	mΩ
VGS(th)	Foliteji Ala ẹnu-ọna	VGS=VDS, ID =250uA	2.0	3.0	4.0	V
△VGS(th)	VGS(th) Olusodipupo iwọn otutu	VGS=VDS, ID =250uA	---	-5.5	---	mV/℃
IDSS	Sisan-Orisun jijo Lọwọlọwọ	VDS=85V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Sisan-Orisun jijo Lọwọlọwọ	VDS=85V, VGS=0V, TJ=55℃	---	---	10	uA
IGSS	Ẹnu-Orisun jijo Lọwọlọwọ	VGS=±25V, VDS=0V	---	---	± 100	nA
Rg	Resistance ẹnu-bode	VDS=0V, VGS=0V, f=1MHz	---	1.0	---	Ω
Qg	Lapapọ idiyele ẹnu-ọna (10V)	VDS=50V, VGS=10V, ID=50A	---	260	---	nC
Qgs	Ẹnu-Orisun idiyele		---	80	---
Qgd	Ẹnubodè-Sisan agbara		---	60	---
Td(lori)	Tan-On Idaduro Time	VDD=50V, VGS=10V,RG=1Ω,RL=1Ω,IDS=1A.	---	88	---	ns
Tr	Aago dide		---	50	---
Td (pa)	Pa Aago Idaduro		---	228	---
Tf	Igba Irẹdanu Ewe		---	322	---
Ciss	Agbara titẹ sii	VDS=40V, VGS=0V, f=1MHz	---	13900	---	pF
Kosi	O wu Agbara		---	6160	---
Krss	Yiyipada Gbigbe Capacitance		---	220	---