WSP4088 N-ikanni 40V 11A SOP-8 WINSOK MOSFET
Gbogbogbo Apejuwe
WSP4088 ni MOSFET trench N-ikanni ti o ga julọ pẹlu iwuwo sẹẹli ti o ga pupọ ti n pese RDSON ti o dara julọ ati idiyele ẹnu-ọna fun ọpọlọpọ awọn ohun elo oluyipada ẹtu amuṣiṣẹpọ. WSP4088 ṣe ibamu pẹlu RoHS ati awọn ibeere ọja alawọ ewe, iṣeduro 100% EAS, igbẹkẹle iṣẹ ni kikun fọwọsi.
Awọn ẹya ara ẹrọ
Gbẹkẹle ati Gaungaun, Awọn ẹrọ Ọfẹ ati Alawọ ewe Wa
Awọn ohun elo
Isakoso Agbara ni Kọmputa Ojú-iṣẹ tabi Awọn oluyipada DC / DC, Awọn siga itanna, gbigba agbara alailowaya, awọn ọkọ ayọkẹlẹ, awọn drones, iṣoogun, gbigba agbara ọkọ ayọkẹlẹ, awọn olutona, awọn ọja oni-nọmba, awọn ohun elo ile kekere, ẹrọ itanna olumulo, bbl
nọmba ohun elo ti o baamu
AO AO4884 AO4882, LORI FDS4672A, PANJIT PJL9424, DINTEK DTM4916 ati be be lo.
Awọn paramita pataki
Iwontun-wonsi to gaju (TA = 25 C Ayafi Ti Bibẹẹkọ Ti ṣe akiyesi)
Aami | Paramita | Rating | Ẹyọ | |
Wọpọ-wonsi | ||||
VDSS | Sisan-Orisun Foliteji | 40 | V | |
VGSS | Gate-Orisun Foliteji | ±20 | ||
TJ | O pọju Junction otutu | 150 | °C | |
TSTG | Ibi ipamọ otutu Ibiti | -55 si 150 | ||
IS | Diode Tesiwaju Lọwọlọwọ | TA=25°C | 2 | A |
ID | Tesiwaju Sisan Lọwọlọwọ | TA=25°C | 11 | A |
TA=70°C | 8.4 | |||
IDM a | Pulsed Sisan Lọwọlọwọ | TA=25°C | 30 | |
PD | Ipilẹ agbara ti o pọju | TA=25°C | 2.08 | W |
TA=70°C | 1.3 | |||
RqJA | Gbona Resistance-Junction to Ibaramu | t £10s | 30 | °C/W |
Ipo imurasilẹ | 60 | |||
RqJL | Gbona Resistance-Junction to asiwaju | Ipo imurasilẹ | 20 | |
IAS b | Avalanche Lọwọlọwọ, Pulu ẹyọkan | L=0.1mH | 23 | A |
EAS b | Avalanche Energy, Nikan polusi | L=0.1mH | 26 | mJ |
Akiyesi a:O pọju. lọwọlọwọ ni opin nipasẹ okun waya.
Akiyesi b:UIS ṣe idanwo ati iwọn pulse ni opin nipasẹ iwọn otutu ipade ti o pọju 150oC (iwọn otutu ibẹrẹ Tj=25oC).
Awọn abuda Itanna (TA = 25 C Ayafi Ti Bibẹẹkọ Ṣe akiyesi)
Aami | Paramita | Awọn ipo Idanwo | Min. | Iru. | O pọju. | Ẹyọ | |
Aimi Abuda | |||||||
BVDSS | Sisan-Orisun didenukole Foliteji | VGS=0V, IDS=250mA | 40 | - | - | V | |
IDSS | Zero Gate Foliteji Sisan Lọwọlọwọ | VDS=32V, VGS=0V | - | - | 1 | mA | |
TJ=85°C | - | - | 30 | ||||
VGS(th) | Foliteji Ala ẹnu-ọna | VDS=VGS, ID=250mA | 1.5 | 1.8 | 2.5 | V | |
IGSS | Gate jijo Lọwọlọwọ | VGS=±20V, VDS=0V | - | - | ± 100 | nA | |
RDS(ON) c | Sisan-Orisun On-ipinle Resistance | VGS=10V, IDS=7A | - | 10.5 | 13 | mW | |
TJ=125°C | - | 15.75 | - | ||||
VGS=4.5V, ID=5A | - | 12 | 16 | ||||
Gfs | Siwaju Transconductance | VDS=5V, ID=15A | - | 31 | - | S | |
Diode Abuda | |||||||
VSD c | Diode Forward Foliteji | ISD=10A, VGS=0V | - | 0.9 | 1.1 | V | |
trr | Yipada Gbigba Time | VDD=20V,ISD=10A,dlSD/dt=100A/ms | - | 15.2 | - | ns | |
ta | Akoko gbigba agbara | - | 9.4 | - | |||
tb | Akoko Idanu | - | 5.8 | - | |||
Qrr | Yipada Gbigba agbara | - | 9.5 | - | nC | ||
Awọn Abuda Yiyi d | |||||||
RG | Resistance ẹnu-bode | VGS=0V,VDS=0V,F=1MHz | 0.7 | 1.1 | 1.8 | W | |
Ciss | Agbara titẹ sii | VGS=0V,VDS=20V,Igbohunsafẹfẹ=1.0MHz | - | 1125 | - | pF | |
Kosi | O wu Agbara | - | 132 | - | |||
Krss | Yiyipada Gbigbe Capacitance | - | 70 | - | |||
td(ON) | Tan-an Idaduro Time | VDD=20V, RL=20W,IDS=1A,VGEN=10V,RG=1W | - | 12.6 | - | ns | |
tr | Tan-an Rise Time | - | 10 | - | |||
td(PA) | Pa Aago Idaduro | - | 23.6 | - | |||
tf | Pa Fall Time | - | 6 | - | |||
Ẹnu Ẹnu Awọn abuda d | |||||||
Qg | Total Gate agbara | VDS=20V, VGS=4.5V, ID=7A | - | 9.4 | - | nC | |
Qg | Total Gate agbara | VDS=20V, VGS=10V,IDS=7A | - | 20 | 28 | ||
Qgth | Ala ẹnu-ọna idiyele | - | 2 | - | |||
Qgs | Ẹnu-Orisun idiyele | - | 3.9 | - | |||
Qgd | Ẹnubodè-Sisan agbara | - | 3 | - |
Akiyesi c:
Idanwo pulse; pulse iwọn £ 300ms, iṣẹ-ṣiṣe £ 2%.