WSP4447 P-ikanni -40V -11A SOP-8 WINSOK MOSFET

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WSP4447 P-ikanni -40V -11A SOP-8 WINSOK MOSFET

kukuru apejuwe:


  • Nọmba awoṣe:WSP4447
  • BVDSS:-40V
  • RDSON:13mΩ
  • ID:-11A
  • Ikanni:P-ikanni
  • Apo:SOP-8
  • Ọja Ooru:Foliteji ti WSP4447 MOSFET jẹ -40V, lọwọlọwọ jẹ -11A, resistance jẹ 13mΩ, ikanni naa jẹ P-ikanni, ati package jẹ SOP-8.
  • Awọn ohun elo:Awọn siga itanna, awọn ṣaja alailowaya, awọn mọto, drones, awọn ẹrọ iṣoogun, ṣaja adaṣe, awọn olutona, awọn ọja oni nọmba, awọn ohun elo kekere, ati ẹrọ itanna olumulo.
  • Alaye ọja

    Ohun elo

    ọja Tags

    Gbogbogbo Apejuwe

    WSP4447 jẹ MOSFET ti n ṣiṣẹ oke ti o nlo imọ-ẹrọ trench ati pe o ni iwuwo sẹẹli giga. O funni ni RDSON ti o dara julọ ati idiyele ẹnu-ọna, ti o jẹ ki o dara fun lilo ninu ọpọlọpọ awọn ohun elo oluyipada ẹtu amuṣiṣẹpọ. WSP4447 pade RoHS ati awọn iṣedede Ọja Alawọ ewe, ati pe o wa pẹlu iṣeduro 100% EAS fun igbẹkẹle kikun.

    Awọn ẹya ara ẹrọ

    Imọ-ẹrọ Trench to ti ni ilọsiwaju ngbanilaaye fun iwuwo sẹẹli ti o ga julọ, Abajade ni Ẹrọ Alawọ ewe pẹlu agbara Ẹnubode Low Super ati idinku ipa CdV/dt ti o dara julọ.

    Awọn ohun elo

    Ga Igbohunsafẹfẹ Converter fun a orisirisi ti Electronics
    Oluyipada yii jẹ apẹrẹ lati fi agbara mu ọpọlọpọ awọn ẹrọ lọpọlọpọ, pẹlu kọǹpútà alágbèéká, awọn afaworanhan ere, ohun elo netiwọki, awọn siga e-siga, ṣaja alailowaya, awọn mọto, drones, awọn ẹrọ iṣoogun, ṣaja ọkọ ayọkẹlẹ, awọn olutona, awọn ọja oni-nọmba, awọn ohun elo ile kekere, ati alabara. itanna.

    nọmba ohun elo ti o baamu

    AOS AO4425 AO4485, LORI FDS4675, VISHAY Si4401FDY, ST STS10P4LLF6, TOSHIBA TPC8133, PANJIT PJL9421, Sinopower SM4403PSK, RUICHIPS RU40L10H.

    Awọn paramita pataki

    Aami Paramita Rating Awọn ẹya
    VDS Sisan-Orisun Foliteji -40 V
    VGS Gate-Orisun Foliteji ±20 V
    ID@TA=25℃ Tesiwaju Sisan Lọwọlọwọ, VGS @ -10V1 -11 A
    ID@TA=70℃ Tesiwaju Sisan Lọwọlọwọ, VGS @ -10V1 -9.0 A
    IDM a 300µs Sisan Isan lọwọlọwọ (VGS=-10V) -44 A
    EAS b Agbara Avalanche, Pulu ẹyọkan (L=0.1mH) 54 mJ
    IAS b Avalanche Lọwọlọwọ, Ẹyọ Kanṣoṣo (L=0.1mH) -33 A
    PD@TA=25℃ Lapapọ Agbara ipadanu4 2.0 W
    TSTG Ibi ipamọ otutu Ibiti -55 si 150
    TJ Ibiti o gbona Junction Nṣiṣẹ -55 si 150
    Aami Paramita Awọn ipo Min. Iru. O pọju. Ẹyọ
    BVDSS Sisan-Orisun didenukole Foliteji VGS=0V, ID=-250uA -40 --- --- V
    △BVDSS/△TJ BVDSS otutu olùsọdipúpọ Itọkasi si 25℃, ID=-1mA --- -0.018 --- V/℃
    RDS(ON) Aimi Sisan-Orisun On-Resistance2 VGS=-10V, ID=-13A --- 13 16
           
        VGS = -4.5V , ID = -5A --- 18 26  
    VGS(th) Foliteji Ala ẹnu-ọna VGS=VDS, ID =-250uA -1.4 -1.9 -2.4 V
               
    △VGS(th) VGS(th) Olusodipupo iwọn otutu   --- 5.04 --- mV/℃
    IDSS Sisan-Orisun jijo Lọwọlọwọ VDS=-32V, VGS=0V, TJ=25℃ --- --- -1 uA
           
        VDS=-32V, VGS=0V, TJ=55℃ --- --- -5  
    IGSS Ẹnu-Orisun jijo Lọwọlọwọ VGS=±20V, VDS=0V --- --- ± 100 nA
    gfs Siwaju Transconductance VDS=-5V, ID=-10A --- 18 --- S
    Qg Lapapọ Owo Ẹnubode (-4.5V) VDS=-20V, VGS=-10V, ID=-11A --- 32 --- nC
    Qgs Ẹnu-Orisun idiyele --- 5.2 ---
    Qgd Ẹnubodè-Sisan agbara --- 8 ---
    Td(lori) Tan-On Idaduro Time VDD=-20V, VGS=-10V,

    RG=6Ω, ID=-1A ,RL=20Ω

    --- 14 --- ns
    Tr Aago dide --- 12 ---
    Td (pa) Pa Aago Idaduro --- 41 ---
    Tf Igba Irẹdanu Ewe --- 22 ---
    Ciss Agbara titẹ sii VDS=-15V, VGS=0V, f=1MHz --- 1500 --- pF
    Kosi O wu Agbara --- 235 ---
    Krss Yiyipada Gbigbe Capacitance --- 180 ---

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