WSR200N08 N-ikanni 80V 200A TO-220-3L WINSOK MOSFET

kukuru apejuwe:

Nọmba awoṣe:WSR200N08

BVDSS:80V

RDSON:2.9mΩ

ID:200A

Ikanni:N-ikanni

Apo:TO-220-3L

Ọja Ooru:WSR200N08 MOSFET le mu to 80 volts ati 200 amps pẹlu resistance ti 2.9 milliohms. O jẹ ẹrọ N-ikanni ati pe o wa ninu package TO-220-3L.

Awọn ohun elo:Awọn siga itanna, awọn ṣaja alailowaya, awọn ọkọ ayọkẹlẹ, awọn eto iṣakoso batiri, awọn orisun agbara afẹyinti, awọn ọkọ ofurufu ti ko ni eniyan, awọn ẹrọ ilera, awọn ohun elo ti n ṣaja ọkọ ayọkẹlẹ, awọn ẹrọ iṣakoso, awọn ẹrọ titẹ 3D, awọn ẹrọ itanna, awọn ohun elo ile kekere, ati ẹrọ itanna onibara.

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Gbogbogbo Apejuwe

WSR200N08 jẹ koto iṣẹ ṣiṣe ti o ga julọ N-Ch MOSFET pẹlu iwuwo sẹẹli ti o ga pupọ, eyiti o pese RDSON ti o dara julọ ati idiyele ẹnu-ọna fun pupọ julọ awọn ohun elo oluyipada ẹtu amuṣiṣẹpọ. WSR200N08 pade RoHS ati ibeere Ọja Alawọ ewe, 100% EAS ṣe iṣeduro pẹlu igbẹkẹle iṣẹ kikun ti a fọwọsi.

Awọn ẹya ara ẹrọ

Ilọsiwaju giga iwuwo sẹẹli Trench ọna ẹrọ, Super Low Gate Charge, Didara ipa ipa CdV/dt, 100% EAS Ẹri, Ẹrọ Alawọ ewe Wa.

Awọn ohun elo

Ohun elo yiyi pada, Isakoso agbara fun Awọn ọna ẹrọ oluyipada, Awọn siga itanna, gbigba agbara alailowaya, awọn ọkọ ayọkẹlẹ, BMS, awọn ipese agbara pajawiri, awọn drones, iṣoogun, gbigba agbara ọkọ ayọkẹlẹ, awọn olutona, awọn ẹrọ atẹwe 3D, awọn ọja oni-nọmba, awọn ohun elo ile kekere, ẹrọ itanna olumulo, ati bẹbẹ lọ.

nọmba ohun elo ti o baamu

AO AOT480L, LORI FDP032N08B, ST STP130N8F7 STP140N8F7, TOSHIBA TK72A08N1 TK72E08N1, ati be be lo.

Awọn paramita pataki

Awọn abuda Itanna (TJ=25℃, ayafi bibẹẹkọ ṣe akiyesi)

Aami	Paramita	Rating	Awọn ẹya
VDS	Sisan-Orisun Foliteji	80	V
VGS	Gate-Orisun Foliteji	± 25	V
ID@TC=25℃	Imugbẹ lọwọlọwọ lọwọlọwọ, VGS @ 10V1	200	A
ID@TC=100℃	Imugbẹ lọwọlọwọ lọwọlọwọ, VGS @ 10V1	144	A
IDM	Sisan omi Pulsed Current2,TC=25°C	790	A
EAS	Agbara Avalanche, Pulu ẹyọkan, L = 0.5mH	Ọdun 1496	mJ
IAS	Avalanche Lọwọlọwọ, Ẹyọ Kanṣoṣo, L = 0.5mH	200	A
PD@TC=25℃	Lapapọ Agbara ipadanu4	345	W
PD@TC=100℃	Lapapọ Agbara ipadanu4	173	W
TSTG	Ibi ipamọ otutu Ibiti	-55 si 175	℃
TJ	Ibiti o gbona Junction Nṣiṣẹ	175	℃

Aami	Paramita	Awọn ipo	Min.	Iru.	O pọju.	Ẹyọ
BVDSS	Sisan-Orisun didenukole Foliteji	VGS=0V, ID=250uA	80	---	---	V
△BVDSS/△TJ	BVDSS otutu olùsọdipúpọ	Itọkasi si 25℃, ID=1mA	---	0.096	---	V/℃
RDS(ON)	Aimi Sisan-Orisun On-Resistance2	VGS=10V,ID=100A	---	2.9	3.5	mΩ
VGS(th)	Foliteji Ala ẹnu-ọna	VGS=VDS, ID =250uA	2.0	3.0	4.0	V
△VGS(th)	VGS(th) Olusodipupo iwọn otutu	VGS=VDS, ID =250uA	---	-5.5	---	mV/℃
IDSS	Sisan-Orisun jijo Lọwọlọwọ	VDS=80V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Sisan-Orisun jijo Lọwọlọwọ	VDS=80V, VGS=0V, TJ=55℃	---	---	10	uA
IGSS	Ẹnu-Orisun jijo Lọwọlọwọ	VGS=±25V, VDS=0V	---	---	± 100	nA
Rg	Resistance ẹnu-bode	VDS=0V, VGS=0V, f=1MHz	---	3.2	---	Ω
Qg	Lapapọ idiyele ẹnu-ọna (10V)	VDS=80V, VGS=10V, ID=30A	---	197	---	nC
Qgs	Ẹnu-Orisun idiyele		---	31	---
Qgd	Ẹnubodè-Sisan agbara		---	75	---
Td(lori)	Tan-On Idaduro Time	VDD=50V, VGS=10V,RG=3Ω, ID=30A	---	28	---	ns
Tr	Aago dide		---	18	---
Td (pa)	Pa Aago Idaduro		---	42	---
Tf	Igba Irẹdanu Ewe		---	54	---
Ciss	Agbara titẹ sii	VDS=15V, VGS=0V, f=1MHz	---	8154	---	pF
Kosi	O wu Agbara		---	1029	---
Krss	Yiyipada Gbigbe Capacitance		---	650	---